
Allicdata Part #: | IXFX48N50Q-ND |
Manufacturer Part#: |
IXFX48N50Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 48A PLUS247 |
More Detail: | N-Channel 500V 48A (Tc) 500W (Tc) Through Hole PLU... |
DataSheet: | ![]() |
Quantity: | 521 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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.IXFX48N50Q is a kind of vertical, insulated-gate, field-effect transistor (IGFET) which belongs to a family of transistors called metal-oxide-semiconductor field-effect transistors (MOSFETs). This MOSFET is a type of single device, meaning it has only one gate, source and drain terminal. It has a maximum voltage of 500V and is suitable for applications including switching and general purpose switching. It is also used in the power control of high power applications such as lighting, fast networks, and industrial equipment.
MOSFETs are transistors which use a low voltage control signal, such as from a microcontroller, in order to control the flow of a high current from the drain to the source terminal. IXFX48N50Q is a voltage-controlled device, meaning that it uses the voltage supplied at the gate terminal to control the amount of current flowing from the source to the drain. This enables the IXFX48N50Q to be used in a variety of applications such as motor control, AC and DC switching, and for high-current loads.
IXFX48N50Q works using the principle of electrical field effect. When the voltage at the gate terminal is increased, the electrons of the drain-source channel will tend to be attracted towards the gate and form a conductive path between the source and the drain. This allows the current to flow from the source to the drain. When the voltage at the gate terminal is decreased, the electrons will be repelled by the gate and the current will be cut off. The gate voltage can be voltage controlled or it can be controlled using a current source.
In addition to the voltage at the gate terminal, there is also the body terminal which plays an important role in the working of IXFX48N50Q. The body terminal acts like an extension of the gate terminal and is connected to the substrate of the device. By controlling the voltage at the body terminal, it is also possible to control the current flow from the source to the drain.
IXFX48N50Q can be used in various applications such as AC and DC motor control, power switching and general purpose switching. It is an ideal choice for high current loads and for applications where low on-resistance and high switching speed are required. Due to its insulation-gate design, it can handle up to 500V in a very reliable manner which makes it suitable for a wide range of applications.
In conclusion, IXFX48N50Q is a single MOSFET device which is suitable for numerous applications including general purpose switching, AC and DC motor control, and power switching. It has a maximum voltage rating of 500V and works using the electrical field-effect principle. Its insulated-gate design makes it an ideal choice for applications where low on-resistance and high switching speed is required.
The specific data is subject to PDF, and the above content is for reference
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