Allicdata Part #: | IXFX220N17T2-ND |
Manufacturer Part#: |
IXFX220N17T2 |
Price: | $ 7.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 170V 220A PLUS247 |
More Detail: | N-Channel 170V 220A (Tc) 1250W (Tc) Through Hole P... |
DataSheet: | IXFX220N17T2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 6.50538 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 31000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 500nC @ 10V |
Series: | GigaMOS™, HiperFET™, TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
Drain to Source Voltage (Vdss): | 170V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A IXFX220N17T2 is a type of Insulated Gate Field Effect Transistor (IGFET), more commonly known as a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is a major component used in applications where a high-speed switching action is needed. In order to understand how a MOSFET works, it\'s important to understand its basic construction.
At the heart of a MOSFET is a thin layer of metal oxide material that sits between the source (input) and the drain (output) terminals. This material acts as an insulator, preventing the current from travelling between these two terminals until a specified gate voltage is applied. When a voltage is applied to the gate electrode, the thickness of the metal oxide layer changes, allowing current to pass through. This phenomenon is known as the “field effect”.
The characteristics of a MOSFET depend on its design, but these devices are generally used in applications that require high-speed switching. For example, they are often used in power electronic applications such as motor control or power management circuits to control the flow of power. Additionally, they are commonly used in amplifier, ultra-low noise, high frequency, and high speed circuits.
The IXFX220N17T2 is a single-gate MOSFET device designed specifically to meet the requirements of applications requiring high frequency and high-speed switching capabilities. It features a low gate-to-drain capacitance, a low threshold voltage, and an ultra-low input leakage current. It is specifically designed to achieve high current and high voltage operation with excellent thermal characteristics.
These devices are capable of handling a wide range of power levels and operating frequencies. They offer excellent switching speed and high-performance features, making them well-suited for a variety of applications, including automotive, consumer, industrial, telecommunications, and computing.
The main advantages of using a MOSFET are as follows: they are more reliable than bipolar transistors; they have higher impedance and higher power dissipation capabilities; they are more capable of withstanding large voltage transients; and they have greater immunity to transients, noise, and external electromagnetic fields. MOSFETs can also be used in a wide range of temperatures and voltages, making them well-suited for a variety of applications.
The IXFX220N17T2 is a useful device for applications where high performance, fast switching, and durability are required. Its use in industries such as automotive, industrial, consumer, and telecommunications make it a valuable component for many applications. Its superior thermal and power management capabilities, low gate-to-drain capacitance, and ultra-low input leakage make it a great choice for high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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