IXFX64N50P Allicdata Electronics

IXFX64N50P Discrete Semiconductor Products

Allicdata Part #:

IXFX64N50P-ND

Manufacturer Part#:

IXFX64N50P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 64A PLUS247
More Detail: N-Channel 500V 64A (Tc) 830W (Tc) Through Hole PLU...
DataSheet: IXFX64N50P datasheetIXFX64N50P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
FET Feature: --
Power Dissipation (Max): 830W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3
Series: HiPerFET™, PolarHT™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Description

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IXFX64N50P, or Insulated-Gate Field-Effect Transistor, is a member of the Fairchild Semiconductor N-Channel Power MOSFET family. This kind of transistor features small dimensions and very low-on-resistance. It has a maximum operating voltage of 600 volts, making it a great choice for high-power applications in the industrial, automotive, and military sectors.

The IXFX64N50P is a single device that contains both a gate and source. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET). An IGFET works by using electric fields to control current flow through a channel between the source and drain. The gate of the device is insulated from the channel with an oxide layer, and a voltage applied to the gate can control the current flow.

The IXFX64N50P has a higher breakdown voltage than other highly efficient MOSFETs on the market. This makes it suitable for applications that require loads of up to 500V DC and a power dissipation of up to 64W. This makes the IXFX64N50P an ideal choice for applications such as DC motor control, lighting, and motor speed control. The device also features a low gate charge and a low capacitance, allowing its application in high-frequency circuits.

In addition to the device’s high efficiency, it also offers periodic short circuit protection and transient suppression. This makes it suitable for applications such as battery charging and quickly switching power. Its square-shaped current-voltage characteristic provides a low conduction loss and Peak-Current-Rating of up to 50A for continuous operation.

The IXFX64N50P has an avalanche rating of up to 100V and can withstand negative voltage surges up to 6V. The device can also operate at extremely low temperatures (-55°C to 175°C). With a low on-state resistance of 0.007Ω, the IXFX64N50P is perfect for applications that require high power efficiency.

Given its high-power efficiency and low-on-resistance, the IXFX64N50P is a great option for numerous applications, ranging from automotive and military to industrial and consumer electronics. This device is an important tool for power management and can make a significant impact on any circuit design.

The specific data is subject to PDF, and the above content is for reference

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