
Allicdata Part #: | IXFX170N20T-ND |
Manufacturer Part#: |
IXFX170N20T |
Price: | $ 7.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 170A PLUS247 |
More Detail: | N-Channel 200V 170A (Tc) 1150W (Tc) Through Hole P... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 6.80230 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 19600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 265nC @ 10V |
Series: | GigaMOS™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFX170N20T is an impressive device incorporating a popular enhancement- mode, N-channel MOS layout within a TO-220 package. This versatile type of MOSFET is a popular choice due to its significant current handling capabilities and low input threshold voltage requirements.
The IXFR170N20T has a rated drain current of 17A, a breakdown voltage of 200V, and a drain-source resistance of 0.070Ω. It is designed to have a high-power handling capability, being able to withstand up to 170W of continuous power with a maximum temperature of 175C.
IXFX170N20T is best suited for a large number of high-power applications, including:
- Power amplifiers and sound systems
- Power supplies and motor drives
- Refrigerators and air-conditioners
- Switch-mode and DC-DC converters
- Industrial equipment and lighting products
The IXFR170N20T provides superior performance and reliability in each of these scenarios and is highly recommended as a robust solution. The device performs admirably as an electronic switch, allowing it to be used in circuits that require precise control.
The basic underlying principle of this MOSFET is that, when an electrical current is conducted from the source to the drain, a resulting electric field is setup that controls the transfer of electrons across the gate oxide, between the source and drain on the MOSFET.
This field allows for the precise control of current flow as the source-drain voltage increases. The IXFX170N20T has a low input threshold of 1.2V and a low input capacitance of 145pF, making it an excellent option for applications such as switching power supplies and motor drives.
The IXFR170N20T\'s performance can be further enhanced by applying additional features such as the body diode protection, which helps to reduce the risk of a short circuit in the case of an overcurrent or overvoltage situation. Other features include a thermal resistance rating of 2.2°C/W and a maximum junction temperature of 200°C.
To sum up, the IXFX170N20T is a dependable and reliable N-channel MOSFET, boasting impressive current and power handling capabilities. Its low input requirements and versatile feature set make it a great option for a wide range of applications, from sound systems to lighting products. Its reliable performance and robust construction make it the ideal MOSFET.
The specific data is subject to PDF, and the above content is for reference
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