IXFX62N25 Allicdata Electronics
Allicdata Part #:

IXFX62N25-ND

Manufacturer Part#:

IXFX62N25

Price: $ 7.82
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 250V 62A PLUS247
More Detail: N-Channel 250V 62A (Tc) 390W (Tc) Through Hole PLU...
DataSheet: IXFX62N25 datasheetIXFX62N25 Datasheet/PDF
Quantity: 1000
30 +: $ 7.03668
Stock 1000Can Ship Immediately
$ 7.82
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFX62N25 is a specially designed high-voltage FET, providing excellent thermal performance and excellent handleability in the absence of a 20V gate voltage. It features a low capacitance body diode, making the device ideal for high-frequency applications. The IXFX62N25 offers a broad range of applications, ranging from power management to switching and amplification. This article will focus on the IXFX62N25 application field and working principle.

IXFX62N25 Working Principle

The IXFX62N25 uses a unique four-layer structure, composed of a body, a gate, the drain, and the source. The construction of the FET results in a low-capacitance body diode, which enables high-frequency applications. The body and the source are commonly connected to the substrate, as the gate and the drain are isolated from the substrate.

When a positive gate voltage is applied to the IXFX62N25, a strong electric field forms between the gate-source and the drain-source surface. This creates an inversion layer around the junction between the gate and the source, which causes the transistor to become conductive. As current flows from the drain to the source, the IXFX62N25 operates in its linear region. By controlling the gate voltage, the drain current can be modulated over a wide range. By modulating the drain current, the IXFX62N25 can be used as a switch or amplifier.

IXFX62N25 Application Field

The IXFX62N25 is well-suited for applications with high-voltage and high-frequency requirements. It is commonly used in a variety of power management applications, such as motor control, power converters, and battery charging. Moreover, the FET is also suitable for switching and amplifier applications in high-voltage, high-frequency systems. As the IXFX62N25 has a low capacitance body diode, it can be used in applications where high switching frequencies are required.

In addition, the IXFX62N25 is widely used in industrial applications, such as welding machines, and in consumer electronics, such as air conditioners and refrigerators. Moreover, the FET is well-suited for automotive applications, as it can be used in systems with high voltage and high temperature. Furthermore, the IXFX62N25 is widely used in HVAC, lighting, security, and metering applications.

Summary

In summary, the IXFX62N25 is a special FET designed for high voltage and high frequency applications. It has a low-capacitance body diode, which makes it well-suited for high-frequency applications, such as power management, switching, and amplification. The IXFX62N25 is commonly used in a variety of industrial, consumer, and automotive applications, as well as for HVAC, lighting, security, and metering applications.

The specific data is subject to PDF, and the above content is for reference

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