IXFX90N30

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFX90N30 is a Power MOSFET which is a single N-channel enhancement type MOSFET. It has a low on-resistance to provide better conduction and high switching speed. The IXFX90N30 can operate at higher voltages of up to 40V and with higher current ratings of up to 9A. It is also capable of withstanding higher power dissipation of up to 110W.

The IXFX90N30 is suitable for a variety of applications, including switching DC power supplies, general purpose low voltage switching and protection circuits, as well as motor control circuits. It is often used in DC-DC converters, computer monitors, power switching circuits and other applications.

The working principle of IXFX90N30 is based on the well-known phenomenon known as the MOSFET transistor action. A MOSFET is a type of field-effect transistor that uses Metal Oxide as the gate insulation layer. This transistor consists of a source, a drain, a gate and a substrate. The source is connected to the drain, and the gate is connected to the substrate. When a voltage is applied to the gate, it attracts electrons in the channel of the MOSFET, creating an inversion layer. This inversion layer creates a channel in the MOSFET through which current can flow from the source to the drain.

The basic operation of the IXFX90N30 can be explained with the help of a simplified circuit. In this circuit, the IXFX90N30 acts as a switch which is controlled by a signal. When the signal is high, the gate of the IXFX90N30 is also high and it is in the on state. Current can then flow from the source to the drain, which completes the circuit. When the signal is low, the gate of the IXFX90N30 is also low and it switches off, which prevents the current from flowing.

In summary, the IXFX90N30 is a single N-channel enhancement type Power MOSFET which is used for various applications such as switching DC power supplies, general purpose low voltage switching and protection circuits, as well as motor control circuits. It has a low on-resistance and is capable of withstanding higher power dissipation. Its working principle is based on the MOSFET transistor action which uses a voltage applied to the gate to create an inversion layer which creates a channel in the MOSFET through which current can flow from the source to the drain.

The specific data is subject to PDF, and the above content is for reference