IXTV02N250S

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	PLUS-220SMD
Supplier Device Package:	PLUS-220SMD
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	116pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	7.4nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	450 Ohm @ 50mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	200mA (Tc)
Drain to Source Voltage (Vdss):	2500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IXTV02N250S is a series of insulated gate field effect transistors, often referred to as MOSFETs (metal-oxide-semiconductor field-effect transistors). It is a single, N-channel MOSFET which is used to control power and voltage levels in various electronic applications. It is designed to support up to 25A of current and has a maximum voltage of 250V.The IXTV02N250S MOSFET is commonly used in applications ranging from solar power control systems, motor control systems, power amplifiers and HVAC. It is also popular in industrial, automotive and consumer applications, such as controlling the flow of current in electric vehicles, stabilizing AC power supplies and regulating DC power supplies. In each application, the IXTV02N250S device provides efficient and reliable power control with its low on-resistance and low gate-to-source threshold voltage.The IXTV02N250S MOSFET works by using voltage levels to control the flow of current in an electronic circuit. It achieves this by using an electrically insulated gate which is responsible for controlling the movement of electrons between the source and the drain, allowing current to flow through the device in one direction only.The IXTV02N250S uses a symmetrical structure with the source and the drain connected to opposite leads and the gate connected to a common lead. The voltage on the gate is used to control the current flow by creating an electrical field on the insulated gate between the source and the drain. When the voltage level is high, the current will flow freely from the source to the drain, and when the voltage level is low, the current will be blocked from flowing. This creates an effective way of controlling the amount of power being passed from the source to the drain.The IXTV02N250S has an on-resistance of 0.8 ohms and a low gate-to-source threshold voltage of 0.8V. This provides a low on-resistance which results in low power consumption and a low gate-to-source threshold voltage which makes it easy to control the flow of current.In addition to its efficient power control, the IXTV02N250S is also a highly reliable device. It is designed to withstand temperatures up to 175°C and features a durable housing construction that is resistant to vibrations and shock. It is also RoHS compliant ensuring that it will not contain any hazardous materials.Overall, the IXTV02N250S is a reliable and efficient insulated gate field effect transistor that is ideally suited for a variety of applications. It offers low on-resistance, low gate-to-source threshold voltage, reliable construction and RoHS compliance ensuring that it is safe to use.

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