IXTV200N10T

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTV200N10T is a high performance N-channel power MOSFET that operates over a wide range of temperatures. It is efficient at switching, driving, and controlling power, and is constructed to be reliable and robust against harsh environments. To take full advantage of the IXTV200N10T, it is important to understand both the application field and working principle of the transistor.

Application Field

The IXTV200N10T is widely used in a variety of power management applications. Its versatile design allows it to operate over a wide range of temperatures, making it suitable for applications ranging from automotive to industrial applications. When used in a switching application, the IXTV200N10T can supply a maximum of 200A of continuous current and up to 10V of continuous voltage. When used in a motor drive application, the IXTV200N10T can supply up to 5A of continuous current and up to 10V of continuous voltage. It can also be used to drive relays or other medium to low voltage devices.

Working Principle

The IXTV200N10T is an N-channel MOSFET which means it is an enhancement mode device which requires a voltage applied to the gate to increase the current flow. The N-channel MOSFET acts as an electronically controlled switch which can be used to switch devices on and off, or even regulate the amount of current passing through the device. The IXTV200N10T is rated to handle up to 200A of continuous current, enabling it to switch relatively high powered devices. It is also able to handle up to 10V of continuous voltage, which means it can be used in a variety of applications.

The IXTV200N10T MOSFET is constructed with a number of layers, each having specific characteristics that enable it to handle high voltages and currents. For example, the source and bulk layers are constructed with field oxide and a gate oxide which helps to isolate the gate voltage from the source and drain. The source and drain layers are made of heavily doped silicon which helps to ensure that a low on-state resistance is maintained, as well as providing an efficient energy path. The gate oxide also helps to ensure a high off-state resistance, which helps to reduce power dissipation.

The IXTV200N10T is a reliable and robust transistor that is capable of handling high voltages and currents, making it a useful device for a variety of power management applications. It is capable of switching, driving, and controlling power, while also remaining reliable and robust against harsh environments. The IXTV200N10T is a high performance N-channel MOSFET that is suitable for many applications, and is an excellent choice for anyone looking for a robust, reliable, and efficient power management solution.

The specific data is subject to PDF, and the above content is for reference