IXTV102N25T Allicdata Electronics
Allicdata Part #:

IXTV102N25T-ND

Manufacturer Part#:

IXTV102N25T

Price: $ 4.21
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 250V 102A PLUS220
More Detail: N-Channel 250V 102A (Tc) Through Hole PLUS220
DataSheet: IXTV102N25T datasheetIXTV102N25T Datasheet/PDF
Quantity: 1000
50 +: $ 3.78731
Stock 1000Can Ship Immediately
$ 4.21
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: PLUS220
Package / Case: TO-220-3, Short Tab
Description

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IXTV102N25T is a single N-channel vertical DMOS field effect transistor, which is part of the Vertical DMOS transistor family of IXYS Corporation. It is a power MOSFET that can be used in a variety of applications, such as in HVAC systems, telecom circuit protection and the control or switching of high currents. It is also suitable for automotive, industrial and agricultural applications.

The IXTV102N25T is a vertical DMOS power MOSFET with a drain-source voltage rating of 25V, a maximum drain current of 100A and an on-resistance of 0.4mΩ. It is designed for use in a variety of power applications such as DC-DC converters, high voltage switching, motor control and other power switching applications. The IXTV102N25T has a low gate capacitance of 15pF, a high transconductance of 17mA/V and a low on-resistance of 0.4mΩ. It is also capable of handling high voltages and currents.

The working principle of the IXTV102N25T is based on the field effect transistor (FET) concept. FETs use a conducting channel between the source and drain which is controlled by the variation in the gate voltage. The gate voltage forms an electric field in the channel and this causes current to flow through the channel and between the source and the drain, effectively switching it on and off. In the IXTV102N25T, the amount of current flow is controlled by the gate voltage, which affects the resistance of the conducting channel.

The IXTV102N25T is usually used in DC-DC converter and power switching applications and is suitable for a variety of load types. In a DC-DC converter, the IXTV102N25T is used to control the voltage between the input and output of the converter, resulting in the desired output voltage. In a power switching application, the IXTV102N25T is used to switch power from one circuit to another and provides isolation between the circuits.

In addition to DC-DC converters and power switching applications, the IXTV102N25T can also be used in devices such as motor controllers, HVAC systems, UPS systems, solar and renewable energy systems, and telecom circuit protection. The IXTV102N25T is particularly suitable for use in high voltage and high current applications, as it can handle high voltage and current levels while still providing good performance and reliability.

In conclusion, the IXTV102N25T is a vertical DMOS field effect transistor with a drain-source voltage rating of 25V, a maximum drain current of 100A and an on-resistance of 0.4mΩ. It is designed for use in a variety of power applications such as DC-DC converters, high voltage switching, motor control, and other power switching applications. The IXTV102N25T is capable of handling high voltages and currents, making it suitable for a variety of applications including HVAC systems, telecom circuit protection and motor controllers.

The specific data is subject to PDF, and the above content is for reference

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