IXTV30N50PS Allicdata Electronics
Allicdata Part #:

IXTV30N50PS-ND

Manufacturer Part#:

IXTV30N50PS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 30A PLUS220-SMD
More Detail: N-Channel 500V 30A (Tc) 460W (Tc) Surface Mount PL...
DataSheet: IXTV30N50PS datasheetIXTV30N50PS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: PLUS-220SMD
Supplier Device Package: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 460W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: PolarHV™
Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IXTV30N50PS is a unique type of transistor, belonging to the Field Effect Transistor (FET) family and specifically in the category of a single MOSFET. The transistors work on the principle of a junction gate field effect and consists of three terminals, namely Source, Drain and Gate.

The IXTV30N50PS transistors are used in various applications such as power switching circuits, where its high current capability, low on-state resistance and fast switching time makes it a preferred choice for automotive, industrial and telecommunication applications.

The source terminal of the transistor is connected to the positive supply of the circuit, while the drain is connected to the load. The voltage given to the gate terminal determines the current flow between the source and the drain. When a positive voltage is given to the gate terminal, the electron numbers are increased, reducing the resistance between the source and drain thereby increasing the current flow. Conversely, when there is a negative voltage at the gate terminal, the electron numbers are reduced, thereby increasing the resistance between the source and drain, thus leading to a decrease in the current flow.

The IXTV30N50PS transistors provide a very high level of performance. It offers a maximum junction temperature of 175°C, low RDS(ON) values of 0.9mΩ and a wide range of VDS (drain source voltage) from 0V to 500V. This makes the IXTV30N50PS suitable for a variety of applications such as low voltage power switching, voltage boosting and ballast circuits.

The IXTV30N50PS is a current limited device and can be prone to thermal runaway if the current applied is not restricted properly. To prevent this, the IXTV30N50PS transistors must be provided with a proper current limiting mechanism and a good heat sink. It also requires proper handling as it is highly sensitive to Electro Static Discharge (ESD).

Overall, the IXTV30N50PS is a great choice for power switching applications and its features and characteristics make it a very reliable and efficient transistor. Its wide operating range allows it to be used in a variety of applications and it is also very reliable with a long operating life. With its high current ratings, low on-state resistance and fast switching time, the IXTV30N50PS is the perfect choice for industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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