Allicdata Part #: | IXTV30N50PS-ND |
Manufacturer Part#: |
IXTV30N50PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 30A PLUS220-SMD |
More Detail: | N-Channel 500V 30A (Tc) 460W (Tc) Surface Mount PL... |
DataSheet: | IXTV30N50PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXTV30N50PS is a unique type of transistor, belonging to the Field Effect Transistor (FET) family and specifically in the category of a single MOSFET. The transistors work on the principle of a junction gate field effect and consists of three terminals, namely Source, Drain and Gate.
The IXTV30N50PS transistors are used in various applications such as power switching circuits, where its high current capability, low on-state resistance and fast switching time makes it a preferred choice for automotive, industrial and telecommunication applications.
The source terminal of the transistor is connected to the positive supply of the circuit, while the drain is connected to the load. The voltage given to the gate terminal determines the current flow between the source and the drain. When a positive voltage is given to the gate terminal, the electron numbers are increased, reducing the resistance between the source and drain thereby increasing the current flow. Conversely, when there is a negative voltage at the gate terminal, the electron numbers are reduced, thereby increasing the resistance between the source and drain, thus leading to a decrease in the current flow.
The IXTV30N50PS transistors provide a very high level of performance. It offers a maximum junction temperature of 175°C, low RDS(ON) values of 0.9mΩ and a wide range of VDS (drain source voltage) from 0V to 500V. This makes the IXTV30N50PS suitable for a variety of applications such as low voltage power switching, voltage boosting and ballast circuits.
The IXTV30N50PS is a current limited device and can be prone to thermal runaway if the current applied is not restricted properly. To prevent this, the IXTV30N50PS transistors must be provided with a proper current limiting mechanism and a good heat sink. It also requires proper handling as it is highly sensitive to Electro Static Discharge (ESD).
Overall, the IXTV30N50PS is a great choice for power switching applications and its features and characteristics make it a very reliable and efficient transistor. Its wide operating range allows it to be used in a variety of applications and it is also very reliable with a long operating life. With its high current ratings, low on-state resistance and fast switching time, the IXTV30N50PS is the perfect choice for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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