| Allicdata Part #: | IXTV22N60P-ND |
| Manufacturer Part#: |
IXTV22N60P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 22A PLUS220 |
| More Detail: | N-Channel 600V 22A (Tc) 400W (Tc) Through Hole PLU... |
| DataSheet: |  IXTV22N60P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-220-3, Short Tab |
| Supplier Device Package: | PLUS220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 400W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 350 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IXTV22N60P is a Field Effect Transistor (FET) with a single high voltage drain current channel. It is part of the IXTV22N60 series of FETs that are designed for high voltage switching applications. They have very low parasitic energy losses that allow higher efficiency and are commonly used in high-power applications. The IXTV22N60P is a N-Channel FET and has a maximum drain current rating of 55A. It is available in a dual package with a pin pitch of 0.3mm and is rated for an avalanche energy rating of 2500W.The IXTV22N60P is designed to be used in high-voltage switching applications. It is capable of working in high temperatures up to 150°C and can withstand voltages up to 200V. Due to its low parasitic energy losses, the IXTV22N60P is suitable for applications such as motor drives, power converters, power switching devices, and other high-power electronics.The working principle of the IXTV22N60P is quite simple. It consists of a N-Channel FET that is formed between the Source and Drain terminals. The Gate terminal of the FET acts as a gate between the Source and the Drain, and when a voltage is applied to the Gate terminal, the FET is activated by allowing current to flow through the FET. The current travels from the Source terminal to the Drain terminal and is controlled by the applied voltage at the Gate terminal.When the Gate terminal is not being used, the FET is in its off state, meaning current will not pass through the FET. This is used in a variety of applications, as it allows current to be switched on and off quickly and easily. It also allows for efficient circuit designs, as the current can be switched quickly with minimal power loss.In addition to its common use in high-voltage switching applications, the IXTV22N60P is also used in a variety of other applications. It is used in motor control applications, such as in industrial control and robotics, where it can be used to switch large amounts of current with high efficiency. It is also used in power converters and power supplies to switch power on and off quickly and efficiently.The IXTV22N60P is an excellent choice for a variety of high-voltage switching applications. Its high voltage rating, high current rating, and low parasitic energy losses make it an ideal choice for a variety of high-power applications. Its simple working principle also make it easy to use and understand, making it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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