IXTV30N50P

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3, Short Tab
Supplier Device Package:	PLUS220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	460W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4150pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 10V
Series:	PolarHV™
Rds On (Max) @ Id, Vgs:	200 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IXTV30N50P Application Field and Working Principle

Introduction to IXTV30N50PIXTV30N50P is a planar insulated gate type n-channel enhancement mode MOSFET (power metal-oxide semiconductor field effect transistor). This MOSFET has an optimal performance with low T(th) of 283 K and excellent energy saving effect due to its reduced on-state resistance RDS(on). In addition, it is optimal for high speed switching system applications.Application Field of IXTV30N50P IXTV30N50P has two major application fields. Firstly, it is used for power management and motor drives. In power management, it is mainly used for battery chargers, DC-DC converters, railway power converters and other smart power applications. In motor drives, it could be used for various motor control applications such as home appliances, power tools, industrial drives, building automation and energy efficient motors. Secondly, IXTV30N50P is used in Inverters, Electric vehicles and Battery Management Applications. It is commonly used in AC inverters and DC-DC converters. It is also used in electric vehicles such as EV, HEV, PHEV, and BMS for battery management.Working Principle of IXTV30N50PIn IXTV30N50P, two common elements are a gate region and two drain and source regions. When no voltage is applied to the gate region, the channel between the two drain and source regions is very resistant (or open) so the device is in OFF state. If a voltage greater than the threshold voltage (VGS(th)) is applied to the gate region, an electric field is created which in turn create a conducting channel between drain & source which enable the device to be ON and a current will be passed through it.Furthermore, IXTV30N50P has an leakage current due to the intrinsic characteristics of MOSFETs. The leakage current is a combination of thermal energy, subthreshold current, and the gate oxide field effect. In IXTV30N50P, the subthreashold current is minimized by the adjustment of the substrate voltage (VGS). ConclusionIXTV30N50P MOSFET is most suitable for high speed switching system, power management and motor driver applications. It has low on-state resistance and gate threshold voltage as well as minimized leakage current. These features make this device an optimal solution for applications such as EV and EV battery management, AC inverters and DC-DC converters.

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