IXTV18N60P

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The IXTV18N60P transistor made by Infineon Technologies is a high voltage and high current super-junction MOSFET that is part of the OptiMOS™ family of enhancement-mode transistors. It has a voltage rating of 500V and a maximum drain-source on-state resistance (RDS) of 0.18 Ohm. This makes the IXTV18N60P suitable for high power applications, such as motor control, power conversion, voltage regulation, UPS, and server applications.

The IXTV18N60P device is designed with a Super-junction architecture, a novel MOSFET structure that provides superior high frequency operation, low on-state resistance as well as improved switching performance. Super-junction devices are made up of a number of PN junctions that are arranged in alternating layers, with alternating P and N type regions. This arrangement extends the depletion region and requires more voltage to turn the device on than a standard MOSFET structure, while also increasing the device’s total conductance.

The IXTV18N60P is typically used in a voltage source configuration, as it has a built in body diode to switch the current in either direction across its drain-source terminals.As a single MOSFET, it can be used in applications such as buck converters, phase-shift circuits and synchronous rectifiers, where it is driven with an n-channel driver. It can also be used in an n-channel topology, in application where high frequency operation is required and low output voltage is desired.In addition, IXTV18N60P devices can be used in high side switching configurations, such as for SMPS and motor control applications.

The IXTV18N60P offers superior performance over standard technologies due to its high voltage and low RDS on-state resistance. Its Super-junction architecture offers superior fast switching performance compared to traditional MOSFET designs, enabling it to provide excellent performance in high speed switching applications. It also offers low gate charge, making it suitable for driving high gate capacitive loads, while its low gate threshold voltage allows it to provide very fast switching times and better system efficiency. Furthermore, its low on-state resistance and 10mA gate threshold drive make it highly suitable for high current applications.

In conclusion, IXTV18N60P transistors made by Infineon Technologies are suitable for high power applications, such as motor control, power conversion, voltage regulation, UPS, and server applications, due to their high voltage, low on-state resistance, fast switching performance, and high current operation.

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