Allicdata Part #: | IXTV26N60PS-ND |
Manufacturer Part#: |
IXTV26N60PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 26A PLUS220-SMD |
More Detail: | N-Channel 600V 26A (Tc) 460W (Tc) Surface Mount PL... |
DataSheet: | IXTV26N60PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXTV26N60PS Application Field and Working Principle
The IXTV26N60PS is an interestingly designed power MOSFET with integrated body diode, part of the IXTV family of High-Voltage and PrimePOWIR Power MOSFETs from IXYS Corporation.
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is a type of transistor that has a large number of applications, including power converters, amplifier devices, and high-speed switches. The IXTV26N60PS provides advanced features and performance, which makes it a good choice for power conversion applications, such as automotive engines, alternators and power supplies.
The IXTV26N60PS has a maximum voltage rating of 600V and a current rating of 26A. It is designed with a floating gate structure, which is more efficient than conventional MOSFETs and provides superior transient performance. The floating gate structure also reduces the power losses, allowing the IXTV26N60PS to operate at higher switching frequencies.
When the source of the IXTV26N60PS is connected to ground, the field-effect transistor (FET) is turned off. When a positive voltage is applied to the source, the FET is turned on. This creates a low on-state resistance, allowing current to flow from the drain to the source. When the voltage on the source is removed, the FET is turned off, blocking the flow of current.
Although the IXTV26N60PS has excellent performance characteristics, it should also be noted that it is a relatively large component, with a footprint of 27mm x 22.5mm. Although it may be too large for some applications, it is an ideal choice for high-power conversion applications.
In conclusion, the IXTV26N60PS is a power MOSFET with an integrated body diode, which is ideal for high-power conversion applications. It has an advanced floating gate structure, which reduces power losses and provides superior transient performance. The IXTV26N60PS can handle a maximum voltage of 600V and a maximum current of 26A.
The specific data is subject to PDF, and the above content is for reference
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