Allicdata Part #: | IXTV98N20T-ND |
Manufacturer Part#: |
IXTV98N20T |
Price: | $ 4.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 98A PLUS220 |
More Detail: | N-Channel 200V 98A (Tc) Through Hole PLUS220 |
DataSheet: | IXTV98N20T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.76564 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 98A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS220 |
Package / Case: | TO-220-3, Short Tab |
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The IXTV98N20T is a type of insulated gate field effect transistor (IGFET) commonly known as a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single-MOSFET with an effective channel length of 0.3 um and a maximum drain-source voltage of 200V. The IXTV98N20T has a high switching speed and low on-resistance, making it ideal for applications such as low voltage, high current switch mode power supplies and other power switching applications.
MOSFETs generally include a source terminal, a gate terminal, and a drain terminal. The device is capable of regulating the drain current by applying a gate-source voltage. The source-drain current passes through the channel between source and drain, which is defined by gate-source capacitance and gate-drain capacitance.
The IXTV98N20T uses an insulated gate as the control element and can be used to add or remove current from the drain. When the voltage applied to the gate is lower than the threshold voltage of the MOSFET, the MOSFET is in the off state, no current flows through the channel and the drain is disconnected from the source. When the gate-source voltage is higher than the threshold voltage, current flow will occur and the drain voltage will be reduced resulting in a decrease in the resistance of the device. The voltage of the gate is regulated by the gate-source capacitance and gate drain capacitance.
The IXTV98N20T also includes protection features built into the device to protect it from over-voltage and over-current conditions. The built-in protection features include a over-voltage protection (OVP) circuit which ensures that the drain voltage does not exceed the maximum voltage of the device. The over-current protection (OCP) circuit is also included to protect the device from excessive drain current, ensuring that the drain current does not exceed the maximum current limit of the device.
Due to its features and its high switching speed, the IXTV98N20T is widely used in a variety of applications such as low-voltage, high-current switch mode power supplies and many types of power switching applications.
In conclusion, the IXTV98N20T is a type of insulated gate field effect transistor (IGFET) commonly known as a metal-oxide-semiconductor field-effect transistor (MOSFET). It has a high switching speed, low on-resistance, over-voltage and over-current protection built into the device, making it ideal for applications such as low-voltage, high-current switch mode power supplies and other power switching applications.
The specific data is subject to PDF, and the above content is for reference
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