Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXTV36N50PS Application Field and Working Principle

The IXTV36N50PS is a high power, single N-channel enhancement mode MOSFET produced by IXYS Integrated Circuits Division. This MOSFET is characterized by a low on-resistance, RDS(on), of 36mΩ and an avalanche energy, EAS, of 381 mJ. It can handle a high drain voltage, VDS, of 600V and a maximum drain current, ID, of 8.34A. The IXTV36N50PS is designed for a wide range of general purpose applications such as switching, welding, piezo-electric actuators, low voltage dc-dc converters, high frequency power converters and motor control.

Features

• Low Input capacitance, CISS=820pF
• Low threshold voltage IDS(on)=0.25V
• High maximum drain-source voltage, VDSS=600V
• Fast Switching Speed
• Parallelable for higher current capability

Applications

• Switching applications
• Welding applications
• Piezo-electric actuators
• Low voltage DC-DC converters
• High frequency power converters
• Motor control

Working Principle

The IXTV36N50PS MOSFET is a three terminal device composed of a source, drain and gate. When voltage is applied to the gate electrode, the MOSFET is in the off-state, with no current flowing between the source and drain electrodes. Increasing the gate voltage switches the device on and current flows from the drain to the source. This operation of the MOSFET is known as an enhancement mode.} When the gate voltage is reduced, the current flow is cut off and the device is again in the off-state.

Pricing and Availability

The IXTV36N50PS is currently available to purchase from most major electronic component distributors. Pricing and availability may vary due to local market conditions.

Conclusion

The IXTV36N50PS is a single N-channel enhancement mode MOSFET designed for a wide range of general purpose applications such as switching, welding, piezo-electric actuators, low voltage dc-dc converters, high frequency power converters and motor control. It is characterized by a low on-resistance, RDS(on), of 36mΩ and an avalanche energy, EAS, of 381 mJ. The IXTV36N50PS is currently available to purchase from most major electronic component distributors.

The specific data is subject to PDF, and the above content is for reference