IXTV200N10TS

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTV200N10TS is a type of field effect transistor (FET). This type of transistor, known as an insulated-gate field effect transistor (IGFET) or synthesized FET (SynFET), is a particular type of MOSFET, or metal oxide semiconductor field-effect transistor. In an IGFET, the MOSFET’s electron mobility, capacitance, and transconductance are controlled by the gate voltage, allowing for higher device performance in many ways.

The IXTV200N10TS is a n-channel enhancement-mode FET. This means that upon application of a positive gate voltage, the voltage required for conduction is reduced, causing the n-channel to form an inversion layer between the source and drain, allowing for current to flow. This functionality has many applications in the world of electronic design and development, including but not limited to power conversion, motor control, and signal amplification.

The IXTV200N10TS is commonly used in power-switch applications, and it can be used in various classes of power MOSFETs, such as the IRF, IGBT, VMOS, and UMOS. It utilizes a trench MOSFET structure, with a 60V drain-source breakdown voltage (BVDSS), and a 17A continuous drain current (ID). It also features low on-state resistance (RDS(on)), fast switching speed, and a wide range of available packages. Due to its excellent characteristics, the IXTV200N10TS is suitable for high-voltage, high-efficiency switching applications.

In addition to its power switch applications, the IXTV200N10TS can also be used in other motor drive and simulation applications. Its low on-state resistance allows for higher efficiency in motor driving, while its wide range of available packages makes it suitable for applications such as power FETs, motor controller ICs, Hall effect ICs, and various switching applications. In simulation, the IXTV200N10TS can be used in various low-power radio frequency (LPRF) applications, such as capacitively-coupled phase shifters, and can provide precise phase shift control.

The IXTV200N10TS is also widely used in linear power supplies, such as in the adjustment of the output voltage. Its low-on state resistance allows for an efficient conversion of power, while its fast switching speed results in more stable voltage output. Moreover, since its breakdown voltage (BVDSS) is rated at 60V, it is suitable for use in high-voltage applications.

Overall, the IXTV200N10TS is a versatile FET suitable for various high-voltage and high-efficiency switching applications. The low on-state resistance, high breakdown voltage, and fast switching speed of the FET make it suitable for use in power conversion, motor control, and signal amplification, as well as various other applications.

The specific data is subject to PDF, and the above content is for reference