Allicdata Part #: | IXTV250N075T-ND |
Manufacturer Part#: |
IXTV250N075T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 250A PLUS220 |
More Detail: | N-Channel 75V 250A (Tc) 550W (Tc) Through Hole PLU... |
DataSheet: | IXTV250N075T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | PLUS220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 550W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 250A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTV250N075T is a 80V, 250A power MOSFET that belongs to the IXTK family of products. It is a field effect transistor (FET) with a maximum current rating of 250 amps, drain-source voltage rating of 80Volts, low gate-source capacitance, low gate-source resistance, and fast energy recovery characteristics. This makes it especially suitable for power conversion and for controlling high-current loads in various applications.
The IXTV250N075T is specifically designed for high-power audio, motor control, and lighting applications. Examples of such applications include solar power inverters, automotive systems, office automation, home security systems, LEDs, and other industrial equipment. The device is designed to provide a high level of heat sink mounting and circuit board flexibility, as well as meet the stringent power requirements of today\'s industrial and consumer devices.
The working principle of a MOSFET is based on the behavior of electrons and their interaction with the gate of the FET. The three terminals of a MOSFET are the source, drain, and gate. When a voltage is applied to the gate, electrons can pass through the channel of the FET, creating a current between the source and drain. By controlling the voltage applied to the gate, the amount of current that is able to pass through the channel can be regulated. The greater the gate voltage, the more current that is allowed to pass through the channel.
The IXTV250N075T is designed to provide maximum switching efficiency with superior power dissipation capability. It has a low gate-drain capacitance, which reduces switching losses, and a low on-state resistance. It has excellent pulse power handling capabilities and minimal gate leakage current. It can switch current as high as 250 amps and operates from 0Volts to a maximum of 80Volts. The device also has built-in protection for overcurrent, overvoltage, and thermal parameters.
The IXTV250N075T is an ideal choice for high-power audio applications, motor control, and lighting applications. Its high current handling capability and low gate-drain capacitance make it ideal for applications that require switching high loads with significant efficiency. Its fast energy recovery characteristics make it excellent for use in home security systems, LEDs, and other industrial equipment. Its low gate-source capacitance and low gate-source resistance help to reduce energy losses during the switching process, resulting in better performance and greater efficiency.
The specific data is subject to PDF, and the above content is for reference
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