IXTV22N50PS

Vgs(th) (Max) @ Id:	5.5V @ 250µA
Package / Case:	PLUS-220SMD
Supplier Device Package:	PLUS-220SMD
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	350W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2630pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	PolarHV™
Rds On (Max) @ Id, Vgs:	270 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IXTV22N50PS is a semiconductor device, a field-effect transistor (FET), specifically a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) of the single type. It was designed by IXYS for high-efficiency and high-power control in industrial applications. A MOSFET is a transistor which uses an insulated gate to control the flow of current. It belongs to a more extensive class of transistors known as field-effect transistors (FETs), where electric fields are used to control current flow. Compared to regular transistors, FETs can be operated in smaller spaces and require fewer voltage drops, making them the preferred choice for high-precision, high-power electronics. In order for current to flow through an FET, its gate voltage needs to exceed a certain threshold. This threshold value is dependent on the construction of the device and the type of FET. The IXTV22N50PS has a threshold voltage of 5.5V (Vgs). When the gate voltage reaches or exceeds this value, current begins to flow. The IXTV22N50PS is specifically designed for high-voltage applications. Its drain-source voltage (Vds) is rated at up to 22V. This indicates that a potential difference of up to 22V can be used between the drain and the source, that is, between the gate and the source. This makes it suitable for use in applications where high-power switching and control are required. As with all FETs, the IXTV22N50PS has two main regions when in operation: the drain and the source. The electric field produced by the gate voltage (Vgs) will create a conductive channel between the source and the drain. This is termed the “channel”. The length and width of the channel is dependent on the design of the FET and the gate voltage applied. When the gate voltage (Vgs) is below the threshold, the channel is blocked and current is prevented from flowing. On the other hand, when the gate voltage (Vgs) is above the threshold, the channel is opened, allowing current to flow between the drain and the source. The IXTV22N50PS is well-suited for a range of high-power applications. It is particularly useful in switching and power control applications where a large drain-source voltage is needed. It also has some additional features that make it even more suitable for these applications, such as its low drain-source on-state resistance (Rds) and its ability to operate at high temperature ranges (Tj). Overall, the IXTV22N50PS is a well designed MOSFET for applications where high power control and efficiency are needed. Its high source-drain voltage ensures that it can operate in highly demanding situations and its robust design ensures that it will last for a long time even at high temperatures. As with any FET, it is important to ensure that the correct gate voltage is applied for optimum performance.

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