IXTV30N60PS

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The IXTV30N60PS is a kind of insulated gate bipolar transistor (IGBT) with a maximum current rating of 30A and a maximum voltage rating of 600V. It is also known as a high power MOSFET and is used in a variety of applications, including motor control, DC-DC converters, switch mode power supplies, and uninterruptible power supplies. The IXTV30N60PS is part of IXYS\' popular line of NexFET IGBTs, and it is designed to offer higher efficiency and improved performance over comparable devices.

An IGBT is basically a combination of a MOSFET’s charge-controlling gate and a bipolar transistor’s current-amplifying emitter, allowing electrical current to be switched on and off by applying an appropriate voltage to the gate terminal. It differs from a bipolar transistor in that it allows for greater precision in controlling the electrical current and voltage, making it more suitable for high power applications like motor control and power supply components.

The IXTV30N60PS is designed to provide superior switching performance and electrical characteristics compared to standard silicon N-channel MOSFETs. It is primarily composed of two switching elements, a P-channel MOSFET and an N-channel enhancement MOSFET. The two elements are combined together in such a way that the switching is controlled by one gate connection while the current conduction is controlled by the other gate.

The IXTV30N60PS is especially well-suited for high-power applications like automotive motor control and DC-DC converters. It has a reverse avalanche rating of up to 600V and is able to withstand up to 30A of continuous current without fail. This makes it ideal for applications where high-power switching is required. Additionally, the IXTV30N60PS also has an on-state resistance of just 0.28Ω which makes it one of the lowest on-state resistance IGBTs available.

The IXTV30N60PS is also designed to offer superior reliability and extended lifetime compared to comparable devices. Its operating temperature range is from -55°C to 150°C and its maximum junction temperature is 175°C. Its extended operating temperature range and maximum junction temperature makes it an ideal choice for large scale industrial applications. Additionally, its integrated temperature and EOS protection circuitry ensures maximum safety and performance in high-current applications.

In summary, the IXTV30N60PS is a high-power MOSFET which is used in a variety of applications, including motor control, DC-DC converters, switch mode power supplies, and uninterruptible power supplies. It is designed to offer superior switching performance, reliability, and extended lifetime compared to standard silicon N-channel MOSFETs. Its low on-state resistance and integrated temperature and EOS protection circuitry make it an ideal choice for large scale industrial applications where high-power switching is required.

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