Allicdata Part #: | IXTV26N60P-ND |
Manufacturer Part#: |
IXTV26N60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 26A PLUS220 |
More Detail: | N-Channel 600V 26A (Tc) 460W (Tc) Through Hole PLU... |
DataSheet: | IXTV26N60P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | PLUS220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTV26N60P is a high-performance insulated gate bipolar transistor (IGBT) designed to provide high-speed switching and protection circuits. It has a maximum gate-emitter voltage range of 1.6V-1.45V and a maximum collector-emitter voltage of 400V, allowing it to be used for many applications, such as motor control, motor drives, inverters, UPS systems, and computer power supplies. In this article, we will discuss the application field, working principle and excellent features of the IXTV26N60P.
Application field
The IXTV26N60P is a versatile device that can be used in a variety of applications. It can be used for motor control, motor drives, inverters, UPS systems and computer power supplies. The device offers the design flexibility required for these applications by providing a high-current capacity and low gate threshold voltage. It is designed to provide fast switching speeds and excellent protection against power transients and overvoltage conditions. Additionally, the IXTV26N60P features integrated over-current protection, which can be used to safely monitor and regulate current in steady-state applications.
Working Principle
The IXTV26N60P is a high voltage insulated gate bipolar transistor (IGBT) that can be used in a variety of applications. It is based on an N-channel design, where the input signal is combined with an internal gate-threshold voltage to turn the device on or off. When the device is on, current flows from the collector to the emitter due to the flow of minority carriers. The device can also be used in hard switching applications; by integrating a freewheeling diode within the device, the IXTV26N60P can provide fast and efficient switching.
Excellent Features
The IXTV26N60P is designed with several excellent features. It can operate over a wide range of temperatures, from -40°C to 125°C, making it suitable for applications in harsh environments. The device is designed to be robust, with a high blocking voltage of 400V, making it extremely reliable in situations where power transients and overvoltage conditions are present. Additionally, the IXTV26N60P features integrated overvoltage and overcurrent protection which can help to reduce damage caused by unexpected power fluctuations. It also features a built-in thermal protection circuit, allowing the device to be able to self-protect itself against over-temperature conditions.
The IXTV26N60P is an excellent choice for a wide range of applications. It is designed with robust features that make it suitable for high-performance applications in harsh environments. It offers a wide range of operating temperature, high blocking voltage, and integrated overvoltage and overcurrent protection, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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