Allicdata Part #: | IXTV26N50PS-ND |
Manufacturer Part#: |
IXTV26N50PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 26A PLUS220-SMD |
More Detail: | N-Channel 500V 26A (Tc) 460W (Tc) Surface Mount PL... |
DataSheet: | IXTV26N50PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTV26N50PS is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used for applications that require a high power switch such as lighting, motor control, and power supplies. It is an enhancement type MOSFET which means that it can handle greater current than a depletion type MOSFET which is normally used for digital switching applications where high frequency and low resistance is desirable. The IXTV26N50PS is well-suited for applications that require high voltage (>200V) and current (>20A) levels.
The IXTV26N50PS has four terminals. The gate is the control terminal which signals the device when to turn on/off, the drain is the output terminal which is connected to the load, the source is the input terminal which is connected to the power source, and the body or substrate terminal is the reference terminal for the input voltage. The voltage on the gate will determine the resistance between the drain and the source. If a positive voltage is applied to the gate terminal, the resistance between the drain and source will be lower; this is called the forward-biased condition. Conversely, if a negative voltage is applied to the gate terminal, the resistance between the drain and source will be greater; this is called the reverse-biased condition.
When in the forward-biased condition, the electron current can flow from the source to the drain and the IXTV26N50PS acts like a ‘switch’. When in the reverse-biased condition, the electron current is blocked from flowing from the source to the drain and the IXTV26N50PS is effectively turned off. This makes the IXTV26N50PS ideally suited for applications where high power must be switched in a controlled manner.
In addition, the IXTV26N50PS is equipped with a variety of features which make it suitable for a wide range of applications. It has an On-Resistance (Rds) of 26mΩ (typical) and an On-Time (Ton) of 33nsec (typical). It has a wide temperature range of -55°C to +175°C and is also RoHS compliant. The IXTV26N50PS is a single MOSFET with internal protection that has been designed to be robust and reliable even when exposed to harsh environments.
In conclusion, the IXTV26N50PS is an ideal solution for applications that require a high power switch in a low voltage, low noise, and low on-resistance application. It has high voltage withstanding capability, robust performance in extreme temperature conditions, and excellent power efficiency. The switchable characteristic of the MOSFET makes it suitable for switching devices, lighting, motor control, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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