IXTV280N055T

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The IXTV280N055T is a high-voltage, Power MOSFET designed for the most demanding applications. It’s an improved version of the IXTH63N050T, which was the first MOSFET on the market with a Built-In Avalanche Ruggedness circuit. This MOSFET is designed to operate efficiently in any configuration of power conditioning or regulation, such as in DC-DC converters, inverters and power switching applications. The IXTV280N055T is designed to minimize the thermal effects of high temperature, as well as the impacts of voltage irregularities and noise.

The IXTV280N055T is a single P-Channel Power MOSFET. The gate is controlled by a direct current (DC) voltage and the drain-source circuit acts as an insulated switch. It’s capable of switching load currents of up to 55A and drain-source voltages of 280V. The high voltage rating ensures that the MOSFET can handle applications with large voltage drops. This MOSFET features a fast switching speed and low turn-on and turn-off losses.

The IXTV280N055T includes a built-in avalanche ruggedness feature, which ensures that the MOSFET can withstand high drain-source voltages without undergoing any damage. This is particularly important in applications with high voltage drop across the device. The MOSFET also has a low gate-charge internal resistance, which minimizes the losses associated with gate charging current.

The IXTV280N055T offers excellent thermal characteristics. Its low thermal resistance sits at 1.2°C/W, allowing the MOSFET to dissipate more heat from the device. This feature helps to extend the lifespan of the MOSFET and reduce the risk of thermal runaway. The maximum junction temperature of this MOSFET is 175°C and its operating temperature range is between -55°C and 150°C.

This MOSFET is designed to operate in highly demanding applications, such as servers, network hubs, industrial equipment and consumer electronics. It can also be used in mobility applications, such as electric vehicles and hybrid cars.

The IXTV280N055T is designed to offer the best performance in any application. It’s capable of switching high voltage loads with minimal losses, while its internal avalanche ruggedness ensures that it can handle large voltage drops without damage. Its low thermal resistance helps to extend the life of the MOSFET, while its high temperature rating ensures that it can work in even the most extreme conditions. This makes it an ideal choice for applications where top performance and reliability are essential.

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