IXTV280N055TS

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N-Channel enhancement mode Field-Effect Transistor (FET) IXTV280N055TS is a depletion type MOSFET, which is typically used in high-power mixed signal applications. The device can handle a maximum on-current of 8 A with a maximum gate source voltage of 28 V.

A MOSFET is a transistor device to regulate current flow. It is typically constructed from two insulated layers. The topmost layer is the gate, and the bottom layer is source and drain. The middle layer is Conductive Channel, which is used as the medium for current flow between source and drain. An applied voltage to the gate can control the current flow. When the circuit is open, the channel is not conducting and current flow is blocked. When the channel is closed, current can flow through the channel.

IXTV280N055TS is used in power management systems, motor control, LED lighting, and LED and other global illumination applications. The device has a breakdown voltage (BVdss) of 280 V and Drain-Source On-Resistance (Rds(on)) of 0.055 Ohms. It also features fast switching speeds, low transitional noise and outstanding EMI performance. It is available in a 8-Pin PowerMITE-L package.

This device has an ESD protection of up to 8 kV on the gate. The ESD protection eliminates the need for additional external protection against ESD. It delivers a low Ron of 0.055 Ohm and a high current rating of 8 A. This makes it suitable for both high-power mixed signal applications and light load power management applications. It also provides excellent performance in harsh environments with high temperature operation up to 175°C.

In addition, IXTV280N055TS has an improved Miller plateau with its Miller plateau voltage of 200 V. This feature provides improved system noise immunity compared with other lower gate threshold devices. It also has an integrated soft-body diode structure, which eliminates the need for a body diode in most applications.

The IXTV280N055TS works on the principle of controlling current flow with a gate voltage. When the gate voltage (VGS) is below the threshold voltage (VGS(th)), the device is in the non-conductive or fully-off state. When the gate voltage (VGS) rises above the threshold voltage (VGS(th)), the channel starts to conduct and the current flow can be controlled by varying the gate voltage (VGS). That is, as the gate voltage (VGS) increases, the conductance of the channel increases and therefore the drain current (ID) increases.

IXTV280N055TS is designed for use in AC/DC and DC/DC power conversion and in power management applications. It is an ideal choice for controlling current flow in a wide range of automotive and industrial systems, such as motor drives, lighting and power control systems. It is also suitable for power factor correction applications and is used in low voltage battery pack protection circuits.

In summary, IXTV280N055TS is an N-Channel enhancement MOSFET with a breakdown voltage of 280 V and Drain-Source On-Resistance of 0.055 Ohms. It delivers a maximum on-current of 8 A, fast switching speed and excellent EMI performance. It is used in high-power mixed signal and power management applications, and is suitable for motor control, LED lighting, and LED and other global illumination applications.

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