IXTV26N50P

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The IXTV26N50P is a popular single-source MOSFET transistor model that is widely used in the electronics industry. It is designed and manufactured by IXYS Corporation, a leader in the semiconductor industry with a reputation for producing reliable and high-performance transistors. This article will explore the application field and working principle of the IXTV26N50P, as well as its features and benefits.

Key Features of the IXTV26N50P

The IXTV26N50P transistor is a Depletion/Enhancement power MOSFET that features a maximum drain current rating of 26A and an avalanche energy rating of 253mJ. Its drain-source voltage rating is 500V and it features an RDS(on) of 0.4Ω when the gate-source voltage is 10V. It is a four-terminal device with a maximum operating junction temperature of -55°C to +150°C, making it suitable for a range of applications.

Application Field

The IXTV26N50P is primarily used in automotive electronic applications such as power windows, car alarms, and electric parking brakes. It is also suitable for other miscellaneous applications such as DC-DC converters, high-side switching, and load current sensing. Additionally, it is widely used in switched-mode power supplies, photovoltaic cell controllers, and other applications requiring a high peak current and low on-resistance. The IXTV26N50P transistor has also been used in home appliance displays, such as LCD and LED backlighting, where it is used for driving the display and providing dimming control.

Working Principle

The IXTV26N50P transistor is a Metal Oxide Semiconductor FET (MOSFET). As a type of field-effect transistor, it is able to control a large amount of current using a relatively small gate voltage. It works by creating an electric field between the gate and the source, acting like a charge gate. When a gate voltage is applied, it allows electrons to flow from the source to the drain, and vice versa when the gate voltage is removed. This process is known as the transistor effect and is at the core of all modern electronics.

The IXTV26N50P features features a low gate-drain breakdown voltage and high gate-source breakdown voltage, making it highly reliable and efficient. The transistor also features a low Miller capacitance, which reduces switching losses and allows for faster switching of loads. This helps to minimize power dissipation and ensures power utilization.

Benefits of the IXTV26N50P

The IXTV26N50P transistor is a durable, high-performance device that is capable of switching high current with low on-resistance. It has a wide temperature range and is suitable for a variety of applications, including automotive, home appliance, and industrial applications. The device also features low Miller capacitance, which helps to reduce switching losses and makes it an economical choice for many applications.

In addition to its impressive performance, the IXTV26N50P also comes with a number of safety features that help to ensure its quality and safety, such as its coated gate dielectric layer and its conformal coating, which helps protect against ESD and humidity. The device is also RoHS compliant.

Conclusion

The IXTV26N50P is a single-source MOSFET transistor model created and manufactured by IXYS Corporation. Its application field includes automotive, home appliance, and industrial applications, as well as DC-DC converters, load current sensing, and high-side switching. Its features include a high drain current rating of 26A, an avalanche energy rating of 253mJ, and an RDS(on) of 0.4Ω when the gate-source voltage is 10V. The IXTV26N50P is highly reliable and efficient, thanks to its low gate-drain breakdown voltage and its low Miller capacitance.

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