Allicdata Part #: | IXTV102N20T-ND |
Manufacturer Part#: |
IXTV102N20T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 102A PLUS220 |
More Detail: | N-Channel 200V 102A (Tc) 750W (Tc) Through Hole PL... |
DataSheet: | IXTV102N20T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | PLUS220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 750W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Series: | TrenchHV™ |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 102A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXTV102N20T is a high power, exceptionally low-gate-charge N-channel enhancement-mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This transistor can be used in a wide range of applications, from high current switching and power supply design to analog amplifier design. It has many favorable characteristics that make it suitable for various applications. In this article, we will look at IXTV102N20T application field and working principle.
As a power MOSFET, IXTV102N20T is able to work with high voltage and high current, which makes it an ideal choice for a variety of applications. It can be used in power supplies, switching circuits, buck converters, audio amplifiers, and high-current load switching applications. It is also suitable for applications that require fast switching speed, since it has a very small capacitance and low on-resistance. Furthermore, its low gate charge makes it an ideal choice for applications that require high frequency switching.
IVTV102N20T’s working principle is based on the transfer of electrons from the source to the drain through the channel in a MOSFET. The gate of the MOSFET acts as a control point, controlling the flow of electrons from the source to the drain. When a voltage is applied to the gate of the MOSFET, positive charges accumulate on the gate and form an electric field between the gate and the source. This electric field repels the electrons, creating a narrow channel for the electrons to pass through. The voltage applied to the gate controls the width of the channel, which in turn controls the amount of current that can flow from the source to the drain.
IXTV102N20T has several features that make it a great choice for applications in power supplies, switching circuits, and audio amplifiers. First, its very low gate charge ensures fast switching times, which makes it ideal for high-frequency switching applications. Second, its very low on-resistance allows for less power dissipation, increasing overall efficiency. Finally, its high breakdown voltage and maximum drain-to-source voltage rating make it suitable for applications that require high voltage and high current.
In conclusion, IXTV102N20T is an excellent choice for many applications that require high voltage, high current, and fast switching speed. It is well-suited for power supply and load switching applications because of its very low gate charge and low on-resistance. It is also an excellent choice for audio amplifier design due to its high breakdown voltage and high maximum drain-to-source voltage rating. All in all, IXTV102N20T is an ideal power MOSFET for many different applications.
The specific data is subject to PDF, and the above content is for reference
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