Allicdata Part #: | IXTV18N60PS-ND |
Manufacturer Part#: |
IXTV18N60PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 18A PLUS220-SMD |
More Detail: | N-Channel 600V 18A (Tc) 360W (Tc) Surface Mount PL... |
DataSheet: | IXTV18N60PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTV18N60PS is a high voltage, ultra-fast and soft-switching 600V N-channel power MOSFET. It is designed and tailored specifically for flyback converters in telecommunications, and server and datacenter applications, as well as other similar power supply and motor control applications. In order to provide these applications with an ideal power solution, the IXTV18N60PS features a low-inductance TO-247 package, which helps minimize power loss due to on-state resistance, as well as a high voltage breakdown rating, allowing it to be used in a wide range of operating conditions.
The IXTV18N60PS is a single-channel MOSFET and is based on a vertical DMOS structure, using a silicon-based substrate instead of the traditional trench MOSFET structure. This type of MOSFET has the advantage of producing a much smoother current regulatory characteristic, due to its symmetrical design. This feature helps to reduce switching losses, as there is no controversy between the P and N channel MOSFETs. Furthermore, because of the symmetric layout, the IXTV18N60PS is an inherently robust device and can withstand short current spikes even with the smallest gate resistance driving it, making it ideal for high-speed switching applications.
In terms of application fields, the IXTV18N60PS can be used in various applications, such as flyback converters in telecommunications, server and datacenter, and power supply and motor control applications. Furthermore, it has been demonstrated to be particularly effective in green energy and medical fields, as its efficient design produces minimum power loss and significantly reduces the voltage stress on switching devices.
The working principle of the IXTV18N60PS is based on the gate terminal of the DMOS transistor. By applying a small voltage to the gate terminal, a high voltage can be switched on and off. When the gate voltage exceeds a certain level, the drain-source breakdown voltage is reached, and the device will stay on until the gate voltage is returned to its original level. This switching mechanism is commonly referred to as the \'on-off\' switching mechanism, which allows the device to be used in high-speed applications.
In conclusion, the IXTV18N60PS is an ideal choice for high voltage, ultra-fast and soft-switching applications. It is based on a vertical DMOS structure, which provides a symmetrical design and improved current regulation characteristics. Additionally, its low-inductance TO-247 package helps reduce switching losses, and its high voltage breakdown rating allows it to be used in a wide range of operating conditions. The IXTV18N60PS is well suited for a variety of applications, including flyback converters in the telecommunications, server and datacenter, and power supply and motor control fields. Furthermore, its efficient design is a great choice for green energy and medical applications. The IXTV18N60PS operates on a \'on-off\' switching mechanism and is controlled by the gate terminal of the device.
The specific data is subject to PDF, and the above content is for reference
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