Allicdata Part #: | IXTV110N25TS-ND |
Manufacturer Part#: |
IXTV110N25TS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 110A PLUS220SMD |
More Detail: | N-Channel 250V 110A (Tc) 694W (Tc) Surface Mount P... |
DataSheet: | IXTV110N25TS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 694W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 157nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 55A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTV110N25TS is a type of insulated-gate bipolar transistor (IGBT) that is part of a special category of electric semiconductor switches known as power transistors. Introduced by IXYS Corporation in 2017, the IXTV110N25TS is a versatile device that can be used in a variety of applications and industries. This article will discuss the application field and working principle of the IXTV110N25TS.
The IXTV110N25TS is a voltage-controlled, power, vertical IGBT with a breakdown voltage rating of 1200V, a typical on-resistance of 25 milliohms, and a typical isolation voltage rating of 5000V. It is characterized by high speed and low voltage, making it ideal for applications that require high efficiency and low power consumption. Typical applications for the IXTV110N25TS include motor control, automotive electronics, renewable energy, aviation, and industrial applications.
The IXTV110N25TS works in much the same way as other transistors. When a current is applied to the gate, it creates an electrical field that attracts holes from the source to the N-type channel, effectively reducing the electrical resistance. This allows electrons to flow from the drain to the source. The amount of current that flows through the IXTV110N25TS depends on the voltage applied to the gate. The higher the voltage, the more current will flow.
The IXTV110N25TS also has several unique features. It has an ultra-low on-time gate charge (Q G ) of 21 nC, allowing it to operate at higher frequencies without sacrificing power efficiency. It also has a low thermal resistance, allowing it to dissipate heat quickly and efficiently, making it an ideal choice for high-current applications that require rapid temperature cycling. The IXTV110N25TS also has an integrated protection circuit, which can help protect devices from excessive thermal, overcurrent, and short-circuit conditions.
The IXTV110N25TS is a powerful device that provides high efficiency and reliable performance. It is suitable for a variety of applications, from motor control and automotive electronics to renewable energy and aviation. Thanks to its low on-time gate charge and low thermal resistance, the IXTV110N25TS is an ideal choice for applications that require high efficiency and low power consumption. Its integrated protection circuits provide added protection to devices from potentially damaging conditions.
The specific data is subject to PDF, and the above content is for reference
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