MRF8HP21130HR5

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MRF8HP21130HR5 is an RF power field effect transistor (FET) developed by Pasternack. It is designed for use with a broad range of broadband signals, including cellular/PCS/LTE, GSM/EDGE, WCDMA, WiMax, WiBro, Digital TV, Amateur Radio and other commercial/industrial applications. It is also suitable for use in amplifiers, transmitters and other demanding applications.

MRF8HP21130HR5 is a high power field effect transistor (FET) with an elevated drain-source breakdown voltage rating and an extended radio frequency range. It is manufactured using a MOSFET process. The process begins with a GaN (Gallium Nitride) substrate that is doped to form a P-type layer, followed by an N-type layer to form the base Schottky barrier. This process creates a junction between the drain and source of the transistor, which allows for more efficient signal transmission. The junction also provides for higher levels of power handling due to the increased drain area.

The working principle of an MRF8HP21130HR5 RF power FET is based on the fact that the drain voltage is maintained at a much higher level than the gate voltage. As the voltage across the gate increases, the drain current increases, allowing for more power to be transmitted. The FET also has a rectifying junction between the drain and source, which can provide a path for the current to flow. When the gate voltage increases, this junction prevents excessive current from flowing, allowing the device to operate at high frequencies with lower levels of power.

MRF8HP21130HR5 FETs are typically used in amplifiers, transmitters and other systems requiring high power handling. The devices are also suitable for use in high frequency switching applications, such as oscillators and digital signal processing circuits. This FET is well suited for use in cellular base stations, wireless LANs, WiMAX, and other very high speed data applications.

MRF8HP21130HR5 is an ideal device for applications requiring high efficiency and power handling. It is designed to operate in frequencies up to 6 GHz and can handle high power at a temperature range from -55°C to 175°C. The device is also designed to ensure no thermal runaway and protection for over-current and over-voltage conditions. It has a rugged design and can sustain a high power output for extended periods of time. The device is also designed to withstand vibration and shock, making it suitable for use in systems where reliability is paramount.

In conclusion, MRF8HP21130HR5 RF power FETs are ideal for applications where high efficiency and power handling are essential. This FET is well suited for use in amplifiers, transmitters and other systems requiring high power. The device is designed to operate at high frequencies and handle high power without thermal runaway or damage. It is also designed to stand up to harsh conditions, making it a reliable and durable component. The device can be used in various applications, including cellular base stations, wireless LANs, WiMAX and other very high speed data systems.

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