MRF8S21140HSR3

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MRF8S21140HSR3 is a cellular RF power MOSFET (field effect transistor) designed to operate in vehicle, ship and aircraft mounted land mobile transceivers. MRF8S21140HSR3 is designed and characterized primarily for high efficiency as an amplifying field effect transistor in the applications where frequency range of 0.8GHz to 1.27GHz is used. This transistor is available in lead-free RoHS / Halogen free package and is suitable for use in WCDMA, GSM and iDEN applications.

MRF8S21140HSR3 is designed to meet the stringent requirements of power amplified RF base stations in cellular networks. The device consists of three cells of highly active silicon and is enclosed in a single package. It features very low on-resistance (R(on)) and very high blocking voltage V(BR). The device is available in a lead-free RoHS / Halogen-free package making it suitable for the demanding requirements of today\'s modern cellular industry.

MRF8S21140HSR3 offers excellent gain, linearity and linearity peak product from 0.8GHz to 1.27GHz. Its small size, low operating power and superior thermal stability makes it ideal for use in a variety of applications. It has a high power gain of 16dB @ 800MHz and a current gain of 105dBm @ 1.27GHz.

The working principle of MRF8S21140HSR3 is based on the principle of field effect transistors. A field effect transistor is a semiconductor device that utilizes an applied electric field to control the conductivity between an S-channel source and drain. The applied electric field can be controlled by either a voltage or current. When voltage is used, the gate-source voltage (VGS) controls the conduction band between the source and drain. When current is used, the gate-source current (IGS) controls the conduction band. As the voltage or current is changed, a new set of Inversion Layer-Conduction band (I-V) characteristics is established which allows for the controlling of the current between the source and drain.

MRF8S21140HSR3 is widely used in a variety of industrial and consumer applications. Its utilization in wireless communications such as walkie-talkies, cell phones, and wireless routers makes this RF power MOSFET a very imperative component in today\'s society. This device is also widely used in RF power amplifiers, RF tags, RF receivers, RFID components, and other short-range wireless communications. By taking advantage of its power handling and efficiency, these devices can be used in any application requiring a high power gain with low losses.

In conclusion, MRF8S21140HSR3 is a highly efficient, low-power, field effect transistor designed for the Cellular RF power amplifiers and other short-range wireless communications. The device provides superior performance in the frequency range of 0.8GHz to 1.27GHz, featuring very low on-resistance (R(on)) and very high blocking voltage (V(BR)). Its small size, low operating power, high power gain and thermal stability make it a very suitable component in many applications.

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