Allicdata Part #: | MRF8S26060HSR5-ND |
Manufacturer Part#: |
MRF8S26060HSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.69GHZ |
More Detail: | RF Mosfet LDMOS 28V 450mA 2.69GHz 16.3dB 15.5W NI-... |
DataSheet: | MRF8S26060HSR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.69GHz |
Gain: | 16.3dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 450mA |
Power - Output: | 15.5W |
Voltage - Rated: | 65V |
Package / Case: | NI-400S-240 |
Supplier Device Package: | NI-400S-240 |
Base Part Number: | MRF8S26060 |
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The MRF8S26060HSR5 is a60 volt, 8 amp MOSFET from Freescale Semiconductor. It is an n-channel enhancement mode field effect transistor (FET) and is intended for use in RF and microwave applications. The transistor has an impedance of 50 ohms, a nominal gain of 18 dB and a power dissipation of 400 watts. It is designed to operate over a temperature range of -55 to +175 degrees Celsius.
The MRF8S26060HSR5 is a depletion mode enhancement field effect transistor (DMFET). It consists of two layers of silicon and a gate layer. The two layers of silicon are source and drain terminals and the gate layer is an insulated gate that controls the amount of current that can flow between them. The transistor has a high input impedance, low output impedance and high gain. This makes it ideal for applications such as transistor oscillators, power amplifiers and switch-mode power supplies.
The working principle of the MRF8S26060HSR5 is based on the effect of an electric field applied to the gate of the transistor. The gate of the transistor acts like a switch, controlling the flow of current between the source and the drain. When a voltage is applied to the gate, it creates an electric field which repels electrons away from the gate, thus creating a conductive channel between the source and the drain. The amount of current that can pass through the channel is determined by the voltage applied to the gate.
The MRF8S26060HSR5 can be used in a multitude of applications in the RF and microwave ranges. It is suitable for use in RF power amplifier designs, transistor switch arrays, high power switch mode power supplies, oscillators, signal processors, frequency multiplier circuits and power controllers. It is especially well suited for use in high frequency and high power applications where efficiency and gains are of key concern.
The MRF8S26060HSR5 is a robust and reliable FET suitable for use in a range of RF and microwave applications. Its ability to handle power and its high input impedance, low output impedance and high gain make it an excellent choice for designers looking for improved performance in their products.
The specific data is subject to PDF, and the above content is for reference
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