MRF8S21100HR5

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The MRF8S21100HR5 is an RF power transistor, developed for use in wide band and broadband amplifiers operating in the 800-1000 MHz frequency range. It is utilized by wireless carriers, industrial, scientific, and medical (ISM) equipment devices. Due to its design, it is capable of delivering high linear power output with good efficiency. Furthermore, it also has a low cost of ownership and requires no external components in order to function properly. This makes it an ideal component for applications where a high power amplifier is needed with minimal component count.

The MRF8S21100HR5 operates as a four-pin n-channel enhancement-mode lateral MOSFET. The device is housed in a surface mount SOT-89 package and has an integral source resistor, gate-source capacitance, and a gate-drain capacitance. The gate-source capacitance is typically 7.5 pF, while the gate-drain capacitance is typically 4 pF, both of which are effective in reducing parasitics and helping the device to reach its full potential. These capacitances also represent the impedance of the device, so they can be used to reduce noise and maintain a steady and reliable power output.

The MRF8S21100HR5 is designed to work with a wide range of voltages, with a minimum voltage of 4 V and a maximum voltage of 16 V. The device has a power gain of 6 dB and a quiescent current of 8 mA. The maximum drain source voltage is 17 V, and the drain efficiency is 70-79%. This device is also capable of providing an output power of 100 watts with a rise time of 500 ns and avalanche energy of 1.7 mJ. The device is rated to operate at a temperature range of -50 to 125℃ with good thermal and electrical characteristics.

In terms of its working principle, the MRF8S21100HR5 works by controlling voltage and current flow between its source and drain terminals. When the gate voltage is applied, electric current is allowed to flow between the source and drain, which generates a signal in the output. The device uses an enhancement mode of operation, meaning that the voltage on the gate must be positive to turn the device on. The voltage on the gate is also used to control the current that is allowed to flow, as a higher voltage will result in a larger current.

The MRF8S21100HR5 is an ideal component for a variety of applications due to its wide range of parameters and capability to deliver high linear power with good efficiency. Its main application field is in wide band and broadband amplifiers operating in the 800-1000 MHz frequency range. It is also used in wireless carriers, industrial, scientific, and medical (ISM) equipment devices. Additionally, the device can be used for other applications that require a high power amplifier with minimal component count.

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