MRF8S8260HSR3

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The MRF8S8260HSR3 is a silicon N-Channel RF power MOSFET designed and manufactured by Infineon. This high voltage RF transistor utilizes advanced process technology to provide maximum efficiency and high gain performance. The device\'s high peak and pulse current abilities make it ideal for use in linear power amplifiers (LPA), harmonic suppression and other high voltage, high power applications.

The MRF8S8260HSR3 is designed to be used in applications such as point-to-point and multi-point communication systems, avionics, RF remote control and other RF energy applications. The device can operate effectively over a frequency range of 0.50 to 1.00 GHz and is capable of providing up to 125 watts of RF power. With a rated drain to source voltage of 60V and an operating drain current range of -0.1A to -7.5A, the MRF8S8260HSR3 is suitable for use in many high-voltage and high-power applications.

The MRF8S8260HSR3 is a voltage-controlled device, meaning the drain current flowing through the transistor is controlled by the voltage applied to its drain. This is achieved by applying a voltage to the gate of the transistor, which in turn acts as a control mechanism for the current flowing through it. In this way, the MRF8S8260HSR3 can be used to amplify signals, suppress unwanted signals, and control power dissipation in high voltage, high power applications.

The MRF8S8260HSR3 features high input power gain and low output resistance, allowing it to achieve its maximum efficiency quickly and accurately. Its maximum gains are characterized for frequencies up to 1.00 GHz, making it suitable for use in high power, base station and RF energy applications. The device also features a low thermal resistance, allowing it to dissipate heat quickly and efficiently, thereby preventing thermal breakdown.

The MRF8S8260HSR3 is designed to be used in a variety of applications, including base station applications, power amplifiers, and harmonic suppressors. It is capable of providing up to 125 watts of RF power, making it suitable for use in mobile communication and RF remote control systems. It is also suitable for use in point-to-point and multi-point communication systems, as well as avionics and other RF energy applications.

In summary, the MRF8S8260HSR3 is an excellent silicon N-Channel RF power MOSFET manufactured by Infineon. It is capable of providing up to 125 watts of RF power and is suitable for use in a variety of applications, including base station applications, power amplifiers and harmonic suppressors. With its high input power gain and low thermal resistance, the MRF8S8260HSR3 is an ideal choice for many high voltage and high power applications.

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