MRF8S21200HSR6

The MRF8S21200HSR6 is a high power, high gain, and high linearity RF MOSFET designed primarily for use in mobile applications such as cellular, UMTS, and LTE base transceiver stations. This MOSFET is a popular choice for use in both pole and antenna amplification stages, making it an ideal choice for cell phone base station design.

The MRF8S21200HSR6 is a single-chip, 25-V, 200-W RF MOSFET. It has a high linearity and high power-added efficiency. It has a gate-source voltage of 15 V, source-drain voltage of 27 V, and drain current of 7 A. It has a maximum usable power gain of 19 dB at 960 MHz and 9-dB power gain at 2.1 GHz.

The main application field of the MRF8S21200HSR6 is cellular, UMTS, and LTE base transceiver stations. This MOSFET device is used in both pole and antenna amplification stages. It is most commonly used for the power amplifiers, directional couplers, load-pull systems, and near-field probe measurements. In addition, this MOSFET can also be used in other applications such as satellite communication, navigation systems, WiFi, VHF/UHF transceiver systems, WiMAX/WiFi base station designs, as well as medical and scientific RF systems.

The working principle of the MRF8S21200HSR6 is similar to that of other MOSFETs. It is constructed from an n-type channel, source and drain electrodes, and a gate electrode. The channel is made from doped-silicon and is connected to the source and drain electrodes. The gate electrode is electrically insulated from the channel and can be used to control the voltage applied to the channel, thus allowing current to flow through the device. The MRF8S21200HSR6 can be used in two primary operation modes: depletion mode or enhancement mode. In depletion mode, the gate-to-source voltage is decreased across the MOSFET which causes the device to operate in the "off" state. In enhancement mode, the gate-to-source voltage is increased across the MOSFET and causes current to flow in the "on" state.

The MRF8S21200HSR6 is an ideal choice for design engineers who are looking for a high-performance, high-power, and high-linearity RF MOSFET solution. It has a wide usage range in cellular, UMTS, and LTE base transceiver stations and is suitable for use in both pole and antenna amplification stages. This device is capable of high power-added efficiency with a high linearity. It has a gate-source voltage of 15 V, source-drain voltage of 27 V, and drain current of 7 A, with a maximum usable power gain of 19 dB at 960 MHz and 9-dB power gain at 2.1 GHz.