MRF8P20160HR3

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The MRF8P20160HR3 is a high-power, high-voltage lateral N-channel enhancement-mode field effect transistor that is among the most powerful FETs currently available. It is typically used in high-power radio frequency (RF) applications, such as amplifiers, antenna drivers, and power sources. This article will discuss the application field and working principle of the MRF8P20160HR3.

General Information

The MRF8P20160HR3 is a lateral N-channel enhancement mode FET with a drain current of up to 9 amps and a drain-source breakdown voltage of 200 volts. It is capable of operating at temperatures from -55°C to +200°C, and is designed for use in high-power RF applications. It is available in a TO-261 package, making it suitable for use in surface mount applications.

Application Field

The MRF8P20160HR3 is suitable for use in a variety of high-power RF applications, including amplifiers, antenna drivers, power sources, and antenna switching. It is a suitable choice for RF applications requiring high power output, such as radio broadcast and communications systems, public address systems, and microwave applications. In addition, it can be used in audio applications requiring high power and low distortion, such as professional PA systems, large-scale sound systems, and car audio systems.

Working Principles

The MRF8P20160HR3 works through the principle of the electric field effect. A voltage applied to the gate terminal controls the current flow through the device, which is dependent on the voltage applied to the gate terminal and the resistance between the drain and source terminals. The electric field effect causes a variation in the electric field between the drain and source terminals relative to the electric field at the gate terminal, resulting in a current flow between the two terminals. This current flow is proportional to the voltage applied to the gate terminal, allowing the device to be used as an amplifier.

The electric field effect is also responsible for the low distortion of the MRF8P20160HR3. The low distortion of the device is due to the fact that the electric field between the drain and source terminals is maintained in a symmetrical configuration, resulting in a smooth transition between the transistors. As a result, distortion is reduced and sound quality is improved.

Conclusion

The MRF8P20160HR3 is a high-power, high-voltage lateral N-channel enhancement-mode field effect transistor suitable for use in a variety of high-power RF applications. It works by utilizing the principle of the electric field effect, which controls the current flow through the device by varying the electric field between the drain and source terminals. It provides a low distortion solution ideal for audio applications such as large-scale sound systems and professional PA systems. It is available in a TO-261 package, making it suitable for use in surface mount applications.

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