MRF8S18210WHSR5

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The MRF8S18210WHSR5 is a high-power, high-efficiency, smart-biased, I/O-matched, N-Channel RF Power MOSFET (metal-oxide-semiconductor field-effect transistor). It is widely used in wireless applications such as consumer, industrial, and automotive communication systems. This type of transistor offers many advantages for RF applications due to its design and characteristics, including a high breakdown voltage, high output power, and fast switching speed. It also has an excellent input-output matching.

The MRF8S18210WHSR5 has a drain-source breakdown voltage (BVDSS) of 18V, a drain-source on-state resistance (RDS(on)) of 0.2 ohm, and a total gate charge (Qg) of 10 nC. Its maximum drain current is 210A and its operating temperature range is between -55°C to 150°C. Its total power dissipation is 65W and its maximum junction temperature is 175°C.

The MRF8S18210WHSR5 is ideal for use in high-power RF applications such as power amplifiers and RF switches. This type of transistor is specifically designed for RF applications and offers superior performance and efficiency. Its fast switching speed and excellent input-output matching provide additional advantages for high-frequency applications.

The working principle of the MRF8S18210WHSR5 is similar to that of a standard MOSFET (metal-oxide-semiconductor field-effect transistor). The device is operated by applying a bias voltage to the gate, which causes a current to flow through the channel between the drain and source. The drain current is controlled by the gate voltage, which can be modulated in order to switch the device on and off. The MRF8S18210WHSR5 also has a low input capacitance and a high transconductance. This makes it ideal for use in RF applications where high speed and precise control are required.

In summary, the MRF8S18210WHSR5 is a high-power, high-efficiency, smart-biased, I/O-matched, N-Channel RF Power MOSFET. It is ideal for use in high-power RF applications such as power amplifiers and RF switches due to its fast switching speed, high output power, excellent input-output matching, and low input capacitance. The device is operated by applying a bias voltage to the gate, which allows it to be switched on and off. The MRF8S18210WHSR5’s characteristics make it a great device for those who are looking to get the most out of their RF applications.

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