Allicdata Part #: | MRF8S19140HSR5-ND |
Manufacturer Part#: |
MRF8S19140HSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.96GHZ NI780HS |
More Detail: | RF Mosfet LDMOS 28V 1.1A 1.96GHz 19.1dB 34W NI-780... |
DataSheet: | MRF8S19140HSR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.96GHz |
Gain: | 19.1dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.1A |
Power - Output: | 34W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Base Part Number: | MRF8S19140 |
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The MRF8S19140HSR5 is a common radiant sourced Field Effect Transistor (FET) used in radio frequency (RF) applications. It performs as a switch from DC to 3.5 GHz, making it a great choice for use in audio, low power, and industrial products. This article will discuss the application field, working principle, and highlights of the MRF8S19140HSR5, specifically the features and specifications that make it the ideal choice for low power RF applications.
Application Field of MRF8S19140HSR5
The MRF8S19140HSR5 is especially useful when applied in battery-powered devices such as wireless communication systems, where there isn’t a direct supply voltage connection. This transistor operates at a low current while providing an RF power output of 20W maximum, with a total harmonic distortion of 0.2 percent across frequencies between DC and 3.5 GHz. In addition, the transistor’s compact size (3mm in length, 0.6mm in width), make it a very adaptable component to incorporate into circuitry designs.
Working Principle of MRF8S19140HSR5
The MRF8S19140HSR5 is a MOSFET transistor, meaning that an electrical potential difference is used to control current flow through a conductive channel. When used as an RF switch, the transistor works to turn the current on and off to connect or disconnect an RF signal path. The transistor is an enhancement mode device, meaning its gate-source voltage must be higher than the threshold voltage of the MOSFET in order for current to travel from the drain to the source.
Highlights of MRF8S19140HSR5
The MRF8S19140HSR5 transistors have numerous advantages over other FETs and MOSFETs. First, it has extremely low noise when switching, eliminating extraneous signal noise and interference. Additionally, this transistor has a low on-resistance, meaning less amount of voltage is required for charging its gate capacitance. This is important for RF switches because a higher gate voltage or current can cause distortion and instability within the field. Finally, the MRF8S19140HSR5 is highly reliable, with a guaranteed shelf life of 25 years.
Conclusion
The MRF8S19140HSR5 is a great option for those designing low power RF circuits, providing excellent switching performance, high reliability and good shelf-life. With its robust Technology, this MOSFET transistor is a reliable and efficient switch solution for low power RF applications.
The specific data is subject to PDF, and the above content is for reference
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