| Allicdata Part #: | MRF8S9220HR3-ND |
| Manufacturer Part#: |
MRF8S9220HR3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 70V 960MHZ NI780H |
| More Detail: | RF Mosfet LDMOS 28V 1.6A 960MHz 19.4dB 65W NI-780 |
| DataSheet: |  MRF8S9220HR3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 960MHz |
| Gain: | 19.4dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1.6A |
| Power - Output: | 65W |
| Voltage - Rated: | 70V |
| Package / Case: | NI-780 |
| Supplier Device Package: | NI-780 |
| Base Part Number: | MRF8S9220 |
Description
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The MRF8S9220HR3 is an enhancement mode, laterally-diffused metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in radio frequency (RF) applications. It is housed in a plastic Surface-Mount Device (SMD) package, with 48 pins and a drain-source breakdown voltage (BVds) rating of 400 volts. The MRF8S9220HR3 features good junction capacitances, low RDS (ON), and high input impedance, making it ideal for mobile radio applications.The MRF8S9220HR3 is designed to switch RF signals from a low-voltage supply, such as an RF power amplifier, to an antenna. This device operates in either grounded-source or source-follower modes, depending on the device configuration. In both modes, the MRF8S9220HR3 can provide high-frequency gain, low-frequency cut-off, and wide dynamic range for controlling the output power of a power amplifier. The MRF8S9220HR3 is composed of three layers of MOSFETs, which form a parallel combination known as a “trexfet”. The conducting channel formed by this combination of MOSFETs provides a high input impedance, as well as low output resistance. The MRF8S9220HR3 also features an independent input and output pin, to control the voltage output. The drain-source voltage is controlled by the gate-source voltage, according to the well-known “MOSFET characteristic equation”.The MRF8S9220HR3 is typically used in RF power-amplifier designs, in order to provide higher gains and switch faster than a conventional bipolar junction transistor (BJT). Furthermore, the device is an ideal fit for applications such as software-defined radio (SDR), automated test equipment (ATE), and VHF and UHF communications, due to its wide frequency range and fast switching speeds.Moreover, the MRF8S9220HR3 is also well suited for cellular base transceiver stations (BTS) and mobile handsets. In both cases, the device can be used to drive RF power amplifiers, RF switches and RF power splitters, in order to control the attenuation and the directionality of the signals.In conclusion, the MRF8S9220HR3 is a versatile, compact and powerful MOSFET optimized for radio frequency applications. With its high frequency gain, low-frequency cut-off, and wide dynamic range, the device is ideal for applications such as mobile radio, software-defined radio, BTS and mobile handsets.
The specific data is subject to PDF, and the above content is for reference
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