NTD3055-094-1G

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	94 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 25V
FET Feature:	--
Power Dissipation (Max):	1.5W (Ta), 48W (Tj)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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NTD3055-094-1G is a controlled unidirectional lower power Field-effect Transistor (FET) designed and manufactured by ON Semiconductor. It is mainly used as a load switch, and as such can be seen in a wide range of applications across many industries. This article will analyze the NTD3055-094-1G in terms of its application fields and working principle.Application FieldsThe various features of the NTD3055-094-1G make it ideal for use in an extensive range of applications. The transistor is especially useful for power sequencing applications in which currents and voltages must be regulated. An example would be a printer system in which the NTD3055-094-1G would be used to control the voltage that powers each component and in turn determine how much current can be sent to each component.The transistor can also be used in various battery management and automotive applications. Battery Management applications require transistors to help manage the battery’s load current and voltage level. In automotive applications, the NTD3055-094-1G is mostly used to control the fuel pump, windshield wiper, fan, and headlight systems.Other applications of the NTD3055-094-1G include DC/DC converters, high-current switch gear, and power amplifiers. It is also used in equipment used in the medical and aerospace industries which require efficient power management.Working PrincipleThe NTD3055-094-1G is a fully self-contained Field-effect Transistor designed to function as a load switch in a wide range of systems. The transistor has two distinct states, an on-state and an off-state.The transistor works by using a pair of electrodes called a gate and a source. When the gate voltage is applied to the transistor, it will go into its on-state, and electrons will begin to flow through the device. In the on-state, the source immediately becomes the source of the electrons which will flow through the device, and the gate will supply a constant positive voltage to maintain the state.The current is controlled by the amount of voltage applied to the gate. When the gate voltage is adjusted, the current flow through the transistor is controlled accordingly. When the voltage is decreased, the current flow is also decreased, and when the voltage is increased, the current flow is increased.When a certain level of voltages is applied to the transistor, it is said to be in its off-state. The source becomes the drain of the electrons, and no current will flow through the device. This means that in the off-state, the gate needs to be actively containing the positive voltage in order to maintain the state.ConclusionThe NTD3055-094-1G is a Field-effect Transistor designed to function as a load switch and provide efficient power management. The transistor can be used in a variety of applications, and its working principle involves the use of a gate and a source to control the flow of current. With its wide range of features and capabilities, the NTD3055-094-1G is an exceptional load switch and an invaluable asset in many industries.

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