NTD32N06-1G Allicdata Electronics
Allicdata Part #:

NTD32N06-1G-ND

Manufacturer Part#:

NTD32N06-1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 32A IPAK
More Detail: N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Thro...
DataSheet: NTD32N06-1G datasheetNTD32N06-1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD32N06-1G is a high-power power MOSFET that has many different applications, including power management, industrial, automotive, and consumer electronics. The device is a three-terminal N-Channel enhancement mode MOSFET, which is designed to provide low source-drain on-resistance and low gate-source capacitance. The NTD32N06-1G has a bulky package, which is designed to dissipate heat more effectively and help in high power situations. Also included is a separate GND pin on the source terminal, which helps reduce the parasitic source-drain inductance. With these features, the NTD32N06-1G can easily handle large amounts of current, making it suitable for high power applications.

The NTD32N06-1G can be used in a variety of applications, including DC/DC converters, high density switching power supplies, and power management controllers. Additionally, the NTD32N06-1G can be used for high current drivers, low impedance power sources, and for reversible motor controlling applications. The device also has an input capacitance and gate-drain capacitance that is suitable for high frequency switching. The wide temperature operating range and low input resistance makes the NTD32N06-1G an ideal choice for high temperature applications.

The working principle behind the NTD32N06-1G is similar to that of other MOSFETs. When a positive voltage is applied to the gate of the device, current will be allowed to flow through the source-drain terminals. This current flow will be proportional to the voltage applied to the gate. The higher the voltage applied, the larger the current flow will be, and vice versa. The device also has a low threshold voltage, meaning that it can be used with small gate voltages, making it suitable for applications where logic circuits are used.

The NTD32N06-1G is an ideal choice for those who need a high power MOSFET. With its wide temperature range, low on-resistance, and low input capacitance, the device is capable of handling high current applications efficiently. The separate GND pin and low input resistance give the device an advantage over other MOSFETs, making it a great choice for applications that require power management. Additionally, the NTD32N06-1G has a low threshold voltage making it suitable for use in logic circuits. Overall, the NTD32N06-1G is an excellent choice for those who need a reliable, high power MOSFET.

The specific data is subject to PDF, and the above content is for reference

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