NTD3813N-35G

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	16V
Current - Continuous Drain (Id) @ 25°C:	9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	8.75 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12.8nC @ 4.5V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	963pF @ 12V
FET Feature:	--
Power Dissipation (Max):	1.2W (Ta), 34.9W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Stub Leads, IPak

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The NTD3813N-35G field-effect transistor is used as a switch component in a variety of electronics applications. It has a hydrologic drain-source voltage of 35 volts and can switch up to 18 amps of continuous current. It has common applications in power-converting and audio equipment, high-speed switching, automotive AC/DC and electronics industrial controllers. Its small size, high reliability, and easy operation make it a standout choice for many operations.The field-effect transistor, such as the NTD3813N-35G, is a semiconductor device that uses a voltage-controlled current source to switch another device on and off. Field-effect transistors are composed of four terminals and are commonly known as source, gate, drain, and substrate. They are also typically made out of silicon, which is widely used as a semiconductor material. The term “field-effect” refers to the fact that the drain-source current is affected by the electric field created by the applied voltage at the gate terminal.The working principle of FETs, like the NTD3813N-35G, is quite simple. An electric field is created by applying a voltage difference to the gate terminal, which in turn causes a small charge to appear between the drain and source terminals. This charge is known as the “channel”, and it acts like a resistor in allowing current flow between the drain and source terminals. By changing the voltage on the gate terminal, the electrical field can be adjusted to allow more or less current to flow in the channel, allowing for very precise control of the current between the drain and source terminals.The NTD3813N-35G is a single N-channel FET, meaning it only has the ability to block current from flowing from the drain to the source. This makes it suitable for switching applications, such as high-speed logic, AC/DC controllers, and audio-amplifying applications. It also has a maximum drain-source voltage rating of 35 volts, making it appropriate for applications that require a high voltage capability.The NTD3813N-35G also has excellent power handling capabilities, thanks to its low on-resistance and small size. It has an efficient thermal dissipation, thanks to its small size, meaning it won’t waste power as other transistors can, making it an excellent choice for high-power applications.From a construction standpoint, the NTD3813N-35G uses a metal-oxide-semiconductor (MOS) structure, which is more tolerant of extreme temperatures and humidity, and can be mounted easily for any application. It has two basic structures: the passgate (consisting of a single MOS structure) and the CMOS (consisting of two MOS structures). The passgate structure is more rugged and easier to build, making it preferable for applications requiring high-reliability and ruggedness. The NTD-3813N-35G is also designed to provide electrical isolation between the gate and drain terminals.The NTD-3813N-35G is an excellent choice for a wide variety of applications, thanks to its high reliability, low on-resistance, and small size. Its flexibility makes it suitable for a wide range of electronics, and its high voltage rating makes it perfect for high-power applications. Thanks to its excellent power handling capabilities and easy operation, the NTD3813N-35G is an ideal addition to any electronics project.

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