NTD32N06-001 Allicdata Electronics
Allicdata Part #:

NTD32N06-001OS-ND

Manufacturer Part#:

NTD32N06-001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 32A IPAK
More Detail: N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Thro...
DataSheet: NTD32N06-001 datasheetNTD32N06-001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD32N06-001, classified as a single field-effect transistor (FET), is commonly used in power supply and circuit designs. It is made with a high-performance N-channel MOS technology and offers maximum voltage and power ratings in a very small package. It is often integrated into a variety of electronic components, and it is also used in other applications such as pulse width modulation, switched-mode power supplies, and motor control, to name a few.

A field-effect transistor (FET) is a type of transistor that uses electric fields in the field between two terminals to control the current flow. This type of transistor has three terminals: the source, the gate, and the drain. A voltage applied to the gate of the transistor changes its electrical characteristics, allowing it to be used as an amplifier or as a switch. FETs are used in a wide range of applications, such as amplifiers, switches, digital logic gates, and radio frequency (RF) devices.

The NTD32N06-001 single FET is ideal for applications in amplifier and switch circuits. Its high voltage and current ratings allow it to handle signals of high power, and its fast switching speed makes it suitable for use in applications that require quick decisions. The device is also known for its high reliability and durability, which makes it a great choice for designs where cost is a major factor.

The working principle of the NTD32N06-001 single FET is designed to offer high voltage and current ratings. The gate terminal is connected to the source of the voltage supply, and the drain terminal is connected to the load. When a signal is applied to the gate, it capacitively couples the signal to the source, creating a small charge. This charge is then amplified by the device, allowing it to control the current at the drain. As the signal at the gate increases, the current at the drain also increases, allowing the device to be used as an amplifier or as a switch.

The NTD32N06-001 single FET is a popular choice for many power supply and circuit designs. Its high voltage and current ratings, fast switching speed, and high reliability make it an ideal choice for a variety of applications, from pulse width modulation and switched-mode power supplies to motor control. The device is also known for its robustness and durability, making it a great choice for cost-sensitive designs.

The specific data is subject to PDF, and the above content is for reference

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