Allicdata Part #: | NTD32N06LG-ND |
Manufacturer Part#: |
NTD32N06LG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 32A DPAK |
More Detail: | N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surf... |
DataSheet: | NTD32N06LG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 16A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta), 93.75W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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, BasicNTD32N06LG application field and working principle
NTD32N06LG is a type of transistor manufactured by ON Semiconductor. It is a high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that provides efficient power transfer in a variety of applications. Because of its size and performance, NTD32N06LG is often preferred over larger transistors in applications where size, weight and power dissipation are important.
Application field
NTD32N06LG is often used in power converters, high-frequency amplifiers, and high-powered switching applications. It has a high input impedance, which makes it suitable for low-voltage, high-frequency applications. It is also ideal for use in high-speed switching circuits, such as those used to control LED lighting. Furthermore, the NTD32N06LG can also be used in automotive and industrial applications that require high-power transfer.
Working Principle
The working principle of NTD32N06LG is simple. Its main function is to act as a switch to control the flow of electricity between two points. The NTD32N06LG is made up of two layers of silicon, which act as the base material. One of these layers, the gate, is responsible for controlling the flow of electricity by blocking or allowing the current to pass through a small gap between the two layers. Through the application of a voltage to the gate layer, the current is either blocked or allowed to pass, depending on the direction of voltage.
The NTD32N06LG also makes use of the drain and source electrical contacts. These are connected to the dependent current source and controlled by the gate voltage. When the gate voltage is increased, the current flow is increased, and vice versa. This control of current is what makes the NTD32N06LG such a versatile component in applications where power transfer needs to be regulated.
In addition to its wireless switching capability, the NTD32N06LG also has several other features that make it an ideal component for power applications. These include its low gate-source voltage, as well as its low forward current gate-source voltage and thermal performance. Together, these features make the NTD32N06LG an efficient and reliable component for power electronics applications.
Conclusion
In conclusion, NTD32N06LG is a high-performance MOSFET that can be used in a variety of power applications. Its size and performance make it ideal for low-voltage, high-frequency applications, such as LED lighting, as well as automotive and industrial applications that require power transfer. It also features low gate-source voltage, low forward current gate-source voltage, and thermal performance, making it an efficient and reliable component.
The specific data is subject to PDF, and the above content is for reference
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