Allicdata Part #: | NTD3055-150T4OS-ND |
Manufacturer Part#: |
NTD3055-150T4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 9A DPAK |
More Detail: | N-Channel 60V 9A (Ta) 1.5W (Ta), 28.8W (Tj) Surfac... |
DataSheet: | NTD3055-150T4 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 28.8W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTD3055-150T4 is a specialized high-voltage MOSFET transistor that is available for purchase. This MOSFET is a single component component featuring a drain-to-source voltage rating of 150 volts and an RDS(on) of 0.48 Ω. It is an attractive component for applications that require quick switching speed. Its gate charge rating is a relatively low 6.1 nC.
Application Field of NTD3055-150T4
NTD3055-150T4 can be used in a variety of applications with its low gate charge, low RDS(on) and high drain-to-source voltage rating. It can be used in automotive applications such as power steering, anti-lock braking systems, fuel injection and airbag systems. It is also commonly used in consumer electronics in audio amplifiers and motor controls. NTD3055-150T4 is a popular choice for use in military and aviation applications as well.
Working Principle of NTD3055-150T4
At the heart of NTD3055-150T4 is the MOSFET transistor. The name “MOSFET” is derived from “Metal-Oxide-Semiconductor Field-Effect Transistor.” In essence, it is a type of transistor that is made up of two main elements; a semiconductor and a gate. The semiconductor is connected to a source and a drain, while the gate is connected to a voltage supply. When the gate voltage is applied, current flows through the source to the drain. The MOSFET creates an electric field that controls the flow of current, allowing the transistor to act as an amplifier or a switch.
The NTD3055-150T4 utilizes an integrated DMOS (Damascene Multi-Layered Oxide). This allows it to operate with a drain-to-source voltage rating of 150 volts. The DMOS also reduces the need for more complex circuitry, making it a reliable and cost effective choice for a variety of applications. Additionally, NTD3055-150T4 features internal ESD protection, providing additional durability and reliability.
NTD3055-150T4 is a cost-effective, high-performance transistor that is suitable for a variety of applications. With a low gate charge, low RDS(on) and high drain-to-source voltage rating, it is an attractive choice for automotive, consumer electronics, military and aviation applications.
The specific data is subject to PDF, and the above content is for reference
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