NTD3055-150T4G Allicdata Electronics

NTD3055-150T4G Discrete Semiconductor Products

Allicdata Part #:

NTD3055-150T4GOSTR-ND

Manufacturer Part#:

NTD3055-150T4G

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 9A DPAK
More Detail: N-Channel 60V 9A (Ta) 1.5W (Ta), 28.8W (Tj) Surfac...
DataSheet: NTD3055-150T4G datasheetNTD3055-150T4G Datasheet/PDF
Quantity: 1000
2500 +: $ 0.16148
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTD3055-150T4G is a high-performance field-effect transistor (FET) that enables designers to use them to switch loads or amplify signals with ease. It is a surface-mount device (SMD) that has a small capacitance, low on-state resistance, high power handling capability and high current carrying capacity which make it suitable for a variety of applications. In this article, we’ll look at the applications of this device, its working principle and a few of its advantages.

Application Field

The NTD3055-150T4G is designed to be used in high-temperature environments and is mainly used to switch and amplify signals, especially in areas with limited space. The device can be used in high-density devices such as mobile phones, LCD monitors, and digital cameras. It is also frequently used in power supplies as a power switch, due to its low switching losses, low on-state resistance, high power handling capability, and high current carrying capacity. Additionally, it is suitable for switching load applications for devices that require high-power levels and high-currents, such as LED lighting devices. It is also used in motor drives and AC motor applications, and in automotive electronics.

Working Principle

The NTD3055-150T4G is an N-channel, metal-oxide semiconductor FET (MOSFET) that operates based on the principle of "field-effect”. In this type of device, the voltage of the gate is used to control the flow of the current between the source and the drain. When a positive voltage is applied to the gate, it creates an electric field which attracts the electrons in the channel region between the source and the drain, thus allowing current to flow through the channel and across the device. Conversely, if a negative voltage is applied to the gate, the electrons in the channel are repelled, thus blocking the flow of the current. This makes it ideal for switching loads on and off.

Advantages

Aside from its high-temperature performance, the NTD3055-150T4G offers several other advantages. It has a low gate leakage current, which helps keep power consumption low and ensures that the device doesn’t overheat in high-temperature environments. It also has a low on-state resistance, which lowers energy losses and improves efficiency. Additionally, it has a high power handling capability and high current carrying capacity, which make it suitable for high-power switching and load applications. Lastly, it is a small surface-mount device, which increases its flexibility and allows for easier integration into design applications.

Conclusion

The NTD3055-150T4G is a high-performance field-effect transistor that has a variety of applications, ranging from power supplies to LED lighting and motor drives. Its key features are its low on-state resistance, high power handling capability and high current carrying capacity, which allow for better performance in high-temperature environments. Additionally, its small size and low power consumption make it ideal for use in spaces with limited space. As such, it can be used in many applications that require reliable switching and signal amplification.

The specific data is subject to PDF, and the above content is for reference

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