Allicdata Part #: | NTD3817NT4G-ND |
Manufacturer Part#: |
NTD3817NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 16V 7.6A DPAK |
More Detail: | N-Channel 16V 7.6A (Ta), 34.5A (Tc) 1.2W (Ta), 25.... |
DataSheet: | NTD3817NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 16V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Ta), 34.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13.9 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 702pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 1.2W (Ta), 25.9W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The NTD3817NT4G is a combination of a high frequency N-Channel Power MOSFET, a Zener voltage regulator, and an integrated circuit (IC) for controlling FET and voltage regulation. This three-in-one device is designed for use in logic-level and Class D power amplifiers. It was launched by ON Semiconductor in 2019 and is available in standard and space-saving packages.
The NTD3817NT4G combines a low-voltage N-channel enhancement mode MOSFET, 65V Zener voltage regulator, and an extremely low-voltage IC in one package. The MOSFET is capable of producing 200mA at 4V and 5V, while the Zener voltage regulator produces 65V. The IC provides logic control with extremely low standby current, and supports the device\'s high gain and operational stability.
The NTD3817NT4G device has several applications in the field of audio and power management, including logic-level and Class D audio amplifiers as well as load switch and DC-DC controller applications. The device is also suitable for applications requiring an operating temperature of -55°C to +155°C. The device offers a wide range of features, such as ultra low-voltage control, high power versatility, high efficiency and long term stability.
The device’s working principle involves the control of the MOSFET gate through the internal IC’s pre-charge and turn-off legs. The MOSFET’s gate is charged to the same potential with the drain, through the pre-charge circuit of the IC. When driven low, the pre-charge circuit is turned off and the MOSFET’s gate is discharged, thus turning off the MOSFET. The Zener voltage regulator provides a constant bias voltage to the IC, while the internal IC regulates the gate drive voltage.
In addition to the integrated circuits and MOSFETs, the NTD3817NT4G also includes a built-in over-temperature protection circuit which monitors the junction temperature via the drain of the MOSFET. If the MOSFET junction temperature exceeds the preset threshold, the device shuts down automatically and resumes operation when the temperature drops back down below the threshold.
The NTD3817NT4G uses a low-power logic level for controlling the FET and the switching of the power device. This helps to reduce the power loss in the device and improve the efficiency. With its multiple features and low-power requirements, the NTD3817NT4G is an ideal choice for power management in audio amplifiers, load switch and DC-DC controller applications.
The specific data is subject to PDF, and the above content is for reference
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