Allicdata Part #: | NTD32N06-ND |
Manufacturer Part#: |
NTD32N06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 32A DPAK |
More Detail: | N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surf... |
DataSheet: | NTD32N06 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1725pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta), 93.75W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The NTD32N06 is an advanced power MOSFET intended for use in applications requiring very high current capability and very low on-resistance. Designed for pulse width modulated (PWM) power conversion applications such as switching DC-DC converters, power amplifiers, and class-D audio amplifiers.
The NTD32N06 is a single 30V logic level N-channel Power MOSFET which provides excellent low on-resistance, low gate threshold voltage, and greater reliability. This MOSFET is ideal for switch-mode-power-supply circuits and other high-frequency applications where very low RDS (on) is required.
Application Fields
The NTD32N06 is suitable for use in an extensive variety of industries. Some of its common applications include switching mode power supplies, class D audio amplifiers, LED drivers, and AC-DC switch-mode power supplies.
This MOSFET is also used in a range of consumer electronics, such as laptop and tablet computers, personal digital assistants (PDAs), digital cameras and camcorders, portable music and entertainment devices, and other small personal electronics that require high power efficiency and low power loss.
The NTD32N06 is a popular choice for automotive, automotive safety, and HVAC/R applications and is recognized by the Automotive Electronics Council as a qualified level product.
Working Principle
This MOSFET works on a straightforward principle: high current is passed through the MOSFET’s conductive channels, connecting its source to its drain. When the gate voltage exceeds the threshold voltage, excess carriers in the channel are gathered at the gate and form an inversion layer. This inversion layer then acts as an electric gate that separates the source and the drain, thus switching the device on. This process allows current to pass through the device, enabling the potential from the source to be transferred to the drain.
When using the NTD32N06 for high frequency applications, its fast switching speeds, low on-resistance, and low voltages come into play. This is because the MOSFET can switch on and off very quickly, ensuring that the required potential is transferred from its source to its drain. Since MOSFETs have a low on-resistance and provide an almost constant current when operated, the current drawn from the switching power supply is significantly lower than it would be when operating at higher frequencies.
The NTD32N06 has a drain-source on-resistance (RDS (on)) of 0.0032Ω which is significantly lower than other comparable devices. This low on-resistance helps reduce power losses in applications requiring high-switching frequencies. This is due to the low on-resistance not only lowering the voltage drop across the MOSFET but also reducing the amount of energy wasted during switching. This low on-resistance is achieved thanks to their 3D structure that was designed to reduce the distance between the conductive channels and the gate.
In addition to its low on-resistance, the NTD32N06 has a low gate threshold voltage (<3V) which ensures stable operation at lower gate drive voltages, allowing the device to be used in low-voltage circuits. The MOSFET also has a high repetitive avalanche rating of 25A which minimizes the risk of device degradation or failure at high current densities.
The NTD32N06 is also designed for ease of use. Its package includes a DS (double-sided) pad design that drastically simplifies inspection and assembly. Its source and drain pins are located on either side of the package and are connected to the underneath PCB (printed circuit board) with copper. This copper connection ensures excellent thermal performance and ensures that the device can dissipate heat quickly.
Overall, the NTD32N06 is a robust and versatile MOSFET, designed for use in a variety of applications. Its fast switching speeds, low on-resistance, and low gate threshold voltage make it an ideal choice for pulse-width modulated power conversion applications such as switching DC-DC converters, power amplifiers, and class-D audio amplifiers. The MOSFET is also heavily used in low voltage consumer electronics applications and is a popular choice for automotive and HVAC/R applications.
The specific data is subject to PDF, and the above content is for reference
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