NTD32N06G Allicdata Electronics
Allicdata Part #:

NTD32N06G-ND

Manufacturer Part#:

NTD32N06G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 32A DPAK
More Detail: N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surf...
DataSheet: NTD32N06G datasheetNTD32N06G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD32N06G MOSFET is an advanced Power MOSFET (Metal–Oxide–Semiconductor Field-effect Transistor). It is designed to withstand high currents and breakdown voltages and is manufactured utilizing a high-performance process technology. This specific MOSFET, manufactured by ON Semiconductor, is a 32 V, 80 mΩ, N-channel device.

Application Fields and Working Principle of NTD32N06G

The NTD32N06G is suitable for a wide range of applications, such as load switching, overcurrent protection, power supplies, secondary diodes, stepping motors, solenoids, relays, converters, and DC–DC converters. Its ON resistance and avalanche breakdown voltage rating make it an ideal choice for applications requiring optimized high current transfer. Additionally, the NTD32N06G is also good for motor control, and uninterruptible power supplies (UPSs).

The basic working principle of a MOSFET starts with the formation of a depletion region due to the stabilization of a voltage between the drain and the source terminals. This depletion region is caused by the accumulation of charge carriers ( electrons or holes). This region acts as an insulating layer between a channel and a drain. This depletion region effectively blocks the current in the off condition.

When a positive voltage is applied between the gate and the source, it attracts enough positive carriers to the channel, resulting in an inverting current through the MOSFET. This allows current to flow from the source to the drain. This process is known as the “on” state of the MOSFET, where the current is larger than when the MOSFET is in its off state.

The NTD32N06G features an advanced gate drive with an incredibly high switching speed and low operating current, allowing for efficiency improvements without compromising performance. With its low gate threshold voltage, it can be easily integrated into any existing design, making it an ideal choice for designers in need of high current, low voltage devices.

In addition, the NTD32N06G has an internally limited avalanche breakdown voltage which offers robust protection against overvoltage or overcurrent events. This makes it a good choice for applications that require fault protection, such as automotive and consumer electronics.

The NTD32N06G is an excellent choice for power management applications that require high current, low voltage, and fast switching speeds. Its highly efficient and reliable design makes it ideal for a variety of market applications.

The specific data is subject to PDF, and the above content is for reference

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