Allicdata Part #: | NTD32N06G-ND |
Manufacturer Part#: |
NTD32N06G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 32A DPAK |
More Detail: | N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surf... |
DataSheet: | NTD32N06G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 93.75W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1725pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD32N06G MOSFET is an advanced Power MOSFET (Metal–Oxide–Semiconductor Field-effect Transistor). It is designed to withstand high currents and breakdown voltages and is manufactured utilizing a high-performance process technology. This specific MOSFET, manufactured by ON Semiconductor, is a 32 V, 80 mΩ, N-channel device.
Application Fields and Working Principle of NTD32N06G
The NTD32N06G is suitable for a wide range of applications, such as load switching, overcurrent protection, power supplies, secondary diodes, stepping motors, solenoids, relays, converters, and DC–DC converters. Its ON resistance and avalanche breakdown voltage rating make it an ideal choice for applications requiring optimized high current transfer. Additionally, the NTD32N06G is also good for motor control, and uninterruptible power supplies (UPSs).
The basic working principle of a MOSFET starts with the formation of a depletion region due to the stabilization of a voltage between the drain and the source terminals. This depletion region is caused by the accumulation of charge carriers ( electrons or holes). This region acts as an insulating layer between a channel and a drain. This depletion region effectively blocks the current in the off condition.
When a positive voltage is applied between the gate and the source, it attracts enough positive carriers to the channel, resulting in an inverting current through the MOSFET. This allows current to flow from the source to the drain. This process is known as the “on” state of the MOSFET, where the current is larger than when the MOSFET is in its off state.
The NTD32N06G features an advanced gate drive with an incredibly high switching speed and low operating current, allowing for efficiency improvements without compromising performance. With its low gate threshold voltage, it can be easily integrated into any existing design, making it an ideal choice for designers in need of high current, low voltage devices.
In addition, the NTD32N06G has an internally limited avalanche breakdown voltage which offers robust protection against overvoltage or overcurrent events. This makes it a good choice for applications that require fault protection, such as automotive and consumer electronics.
The NTD32N06G is an excellent choice for power management applications that require high current, low voltage, and fast switching speeds. Its highly efficient and reliable design makes it ideal for a variety of market applications.
The specific data is subject to PDF, and the above content is for reference
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