NTD32N06L-001 Allicdata Electronics
Allicdata Part #:

NTD32N06L-001OS-ND

Manufacturer Part#:

NTD32N06L-001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 32A IPAK
More Detail: N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Thro...
DataSheet: NTD32N06L-001 datasheetNTD32N06L-001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTD32N06L-001 is an advanced power component in the field of FETs and MOSFETs. This component has high power dissipation and is commonly used in applications such as power inverters, motor drives, and power supplies. While its basic principle of operation is the same as other FETs and MOSFETs, the NTD32N06L-001 offers improved performance, durability, and efficiency.

The NTD32N06L-001 is a voltage-controlled single-channel MOSFET device. It is composed of two types of semiconductor layers (an insulating oxide film and a silicon substrate) sandwiched between two metal contacts. The NTD32N06L-001 operates on the principle of minority carrier injection, meaning that electrons and holes can move freely between the source and drain terminal when a voltage is applied. As the voltage between the source and drain terminals increases, the MOSFET’s resistance decreases, allowing for more current flow.

This device is capable of controlling a high amount of power from a single source. The NTD32N06L-001 has a maximum continuous drain current of 32A with a voltage rating of 60V. It has a drain-source breakdown voltage of 100V, enabling it to withstand a wide range of supply voltages. In addition, the NTD32N06L-001 can handle large capacitive loads and achieve higher efficiency, making it suitable for many high-power applications.

The NTD32N06L-001 also has an integrated gate protection device which can protect the device from any potential damages due to over-voltage or over-current. As its gate-protection feature supports both ac and dc voltage, it can be used for both single-phase and three-phase applications. The NTD32N06L-001 also has a low on-state resistance which effectively reduces power losses and increases the efficiency of the system.

The NTD32N06L-001 has a range of applications due to its high power dissipation, efficient operation, and low on-state resistance. It is commonly used in motor drives, UPS, inverters, and power supplies. It is also used for many industrial applications such as controlling heavy loads and high-power motors. The NTD32N06L-001 can also be used in solar and wind power applications due to its efficient operation and capability to control large capacitive loads.

In conclusion, the NTD32N06L-001 is an advanced component with a range of features and capabilities. It is commonly used in many applications due to its high power dissipation, efficiency, and low on-state resistance. As it also has a gate-protection feature, it can be used in both single-phase and three-phase applications with both ac and dc voltage. Therefore, the NTD32N06L-001 is an ideal component for applications that require high power dissipation and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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