NTD3055-094G Discrete Semiconductor Products |
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Allicdata Part #: | NTD3055-094GOS-ND |
Manufacturer Part#: |
NTD3055-094G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 12A DPAK |
More Detail: | N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface... |
DataSheet: | NTD3055-094G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta), 48W (Tj) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 94 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
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The NTD3055-094G is a high-power N-channel MOSFET designed to provide a high current flow and an ultra-low on-resistance, making it highly suitable for Switching applications. It is also an excellent choice for DC/DC converters, high-power amplifiers, voltage regulators, and motor driver applications.
The device is capable of rapid switching speeds, meaning it can handle high-frequency applications, while its low capacitance keeps power losses to a minimum. It can handle up to 100V, and can store up to 60A of current, making it well suited for medium to high-power applications.
The NTD3055-094G comes in a package that is small and lightweight, making it easy to install in applications where space is limited. The device also features a dual-channel structure with a highly accurate low-resistance channel and a low input capacitance channel. It is also highly reliable, offering a low failure rate and high thermal cycling performance
The NTD3055-094G’s working principle is based on the MOSFET architecture. Unlike BJT transistors, a MOSFET is driven by a voltage signal, not a current signal. This means that the current it can conduct is determined by its input threshold voltage.
When the NTD3055-094G is supplied with a voltage beyond its threshold voltage, it can open and close a very low resistance. This allows current to flow, in or out, depending on the position of the gate. When the gate is open, current can flow from the source to the drain. When the gate is closed, no current can flow.
The NTD3055-094G’s low capacitance and high-speed switching reduces power losses, making it well suited for high-frequency applications. It can also handle up to 100V, and can store up to 60A of current, making it ideal for DC/DC converters, high-power amplifiers, voltage regulators, and motor driver applications.
Overall, the NTD3055-094G’s ultra-low on-resistance, high current flow, and small package make it an excellent choice for a wide range of applications. Its dual-channel structure, rapid switching speeds and high reliability guarantees that it will perform well in the most demanding of applications and provide years of reliable operation.
The specific data is subject to PDF, and the above content is for reference
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